Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Sun-Ghil Lee"'
Autor:
Seung-Mok Shin, Taiki Uemura, E. S. Jung, Seungbae Lee, Y. Ji, Hyunjo Shin, Joo-Byoung Yoon, H. J. Goo, Yun-Jae Lee, Kyongtaek Lee, Jun-Kyun Park, S. H. Hwang, Jung Hyoung Lee, Jongkyun Kim, G. T. Jeong, Seung-Uk Han, Y. J. Song, K. C. Park, Sun-Ghil Lee, G. H. Koh, B. Y. Seo, Sangwoo Pae, Junhee Lim
Publikováno v:
IRPS
STT-MRAM has great attention as next generation memory to replace commercialized memory. However, not many articles are available on various MRAM reliability items. In this paper, we studied FBC trend of STT-MRAM with ECC off mode under various relia
Autor:
Pierre C. Fazan, Romain Ritzenthaler, Johan Albert, Vasile Paraschiv, Wilfried Vandervorst, E. Vecchio, Aftab Nazir, Efrain Altamirano-Sanchez, Geert Schoofs, Nadine Collaert, H.-J. Na, Sun-Ghil Lee, F. Sebai, Thomas Kauerauf, Naoto Horiguchi, Y. Son, Moon Ju Cho, Alexey Milenin, Alessio Spessot, Bastien Douhard, Marc Aoulaiche, K. B. Noh, Aaron Thean, Christian Caillat, Soon Aik Chew, Tom Schram
Publikováno v:
IEEE Transactions on Electron Devices. 61:2935-2943
In this paper, a low-cost and low-leakage gate-first high-k metal-gate CMOS integration compatible with the high thermal budget used in a 2× node dynamic random access memory process flow is reported. The metal inserted polysilicon stack is based on
Autor:
Mark S. Rodder, Mong-song Liang, Cheol Kim, Taek-Soo Jeon, Dong-Won Kim, Sunjung Kim, Kittl Jorge A, Jae Hoo Park, Wookje Kim, Jongwook Jeon, Sun-Ghil Lee, Myung-Geun Song, Kab-Jin Nam, Seung-Hun Lee, Yeon-Cheol Heo, Sean Lian, Sang-Woo Lee, Uihui Kwon, Geum-Jong Bae, Dong-il Bae, Kang-ill Seo, Krishna Kumar Bhuwalka, Ki-Hyun Hwang, Yihwan Kim, E. S. Jung, Jae-Young Park
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
A novel tensile Si (tSi) and compressive SiGe (cSiGe) dual-channel FinFET CMOS co-integration scheme, aimed at logic applications for the 5nm technology node and beyond, is demonstrated for the first time, showing electrical performance benefits and
Autor:
Myoung-Sook Kim, Soo-jin Hong, Kinam Kim, Jungyub Lee, J. H. Heo, J.W. Lee, S.H. Shin, C.H. Cho, T.Y. Chung, Yong-Seok Kim, D.I. Bae, Sun-Ghil Lee, Jonghyun Oh, Sungho Park
Publikováno v:
Journal of the Korean Physical Society. 43:887-891
Publikováno v:
Progress in Photovoltaics: Research and Applications. 10:47-53
Buried contact solar cells (BCSC) have been fabricated on boron-doped p-type tricrystalline Czochralski silicon wafers (Tri-Si) and the output characteristics were compared with those of multi-crystalline silicon wafers and single crystalline Czochra
Autor:
S-G Lee, Kathy Barla, Pierre Eyben, Hugo Bender, Adam Brand, Geert Eneman, P. Storck, Sun-Ghil Lee, Naomi Yoshida, Hans Mertens, D. Vanhaeren, L.-A. Ragnarsson, Jacopo Franco, David P. Brunco, Paola Favia, Niamh Waldron, Nadine Collaert, Jerome Mitard, R. Olivier, Roger Loo, Liesbeth Witters, Xinliang Lu, Jianwu Sun, Hiroaki Arimura, Annelies Vanderheyden, S. Sonja, M. Vorderwestner, Alexey Milenin, Christa Vrancken, A. V-Y. Thean, Andriy Hikavyy, Naoto Horiguchi
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
An STI-last integration scheme was successfully developed to fabricate low-defectivity and dopant-controlled SiGe SRB / sGe Fins. For the first time, 15 nm fin-width SiGe SRB/highly-strained Ge pFinFETs are demonstrated down to 35 nm gate length. Wit
Publikováno v:
Current Applied Physics. 1:505-508
Tri-crystalline silicon wafers have been used for fabrication of buried contact solar cells. Optical properties and microstructures after texturing in KOH solution have been studied and compared with those of multi-crystalline silicon wafers. The tex
Publikováno v:
Journal of Materials Science: Materials in Electronics. 12:619-622
Multicrystalline silicon wafers were isotropically textured using two kinds of modified acid texturing methods. One of the modifications is based on the introduction of the spray deposition method into the conventional acid etching of Si wafers. Sili
Publikováno v:
Physical Review B. 59:13501-13504
Autor:
Sun-Ghil Lee, K. J. Chang
Publikováno v:
Semiconductor Science and Technology. 14:138-142
We investigate the origin of the broad luminescence observed around 2.7-2.9 eV in heavily Mg-doped GaN through first-principles pseudopotential calculations. We find that a defect complex composed of an Mg interstitial and an N vacancy gives rise to