Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Sun Zhongzhe"'
Autor:
Sun, Zhongzhe *, Wu, Ju, Chen, Yonghai, Liu, Fengqi, Ding, Ding, Li, Yuefa, Xu, Bo, Wang, Zhanguo
Publikováno v:
In Journal of Crystal Growth 2000 218(2):203-208
Publikováno v:
Journal of Applied Physics; May2002, Vol. 91 Issue 9, p6021, 6p, 1 Black and White Photograph, 3 Diagrams, 1 Chart
Publikováno v:
Journal of Crystal Growth. 259:40-46
InAsN quantum dots were grown on GaAs (0 0 1) substrate by a solid source molecular beam epitaxy (SSMBE) system equipped with a radio-frequency (RF) nitrogen plasma source. The quantum dot formation was confirmed by reflection high-energy electron di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b3bbb825c11630ef0ec2f91d9f16dc
https://doi.org/10.1016/s0022-0248(03)01580-x
https://doi.org/10.1016/s0022-0248(03)01580-x
Autor:
Ng Tien Khee, Loke Wan Khai, Sun Zhongzhe, Fan Weijun, Yoon Soon Fatt, Yew Kuok Chuin, Wang Shanzhong
Publikováno v:
Journal of Applied Physics. 94:1069-1073
GaAsN was grown by molecular beam epitaxy equipped with a radio frequency nitrogen plasma source. The N incorporation behaviors were investigated using a series of samples grown at different growth rates, As4/Ga ratios, and nitrogen fluxes within a g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a3e1362ef3406c6a28d630b84d5933d
https://doi.org/10.1063/1.1582554
https://doi.org/10.1063/1.1582554
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 8:164-169
In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates;
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55f5b310ef683fe8524d0a5eb509d37
https://doi.org/10.1016/s1386-9477(00)00134-x
https://doi.org/10.1016/s1386-9477(00)00134-x
Autor:
Liu Feng-Qi, Wang Zhan-Guo, Chen Yong-Hai, Jiang Wei-hong, Ye Xiaoling, Sun Zhongzhe, Xu Huai-zhe, Wu Ju, Xu Bo
Publikováno v:
Journal of Applied Physics. 88:533-536
Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f23381f04b805f45c595acc2875c77d1
https://doi.org/10.1063/1.373691
https://doi.org/10.1063/1.373691
Publikováno v:
Journal of Crystal Growth. 204:24-28
InAs and In0.9Al0.1As self-assembled quantum dots have been grown by Stranski-Krastanow growth mode on In0.52Al0.48As lattice-matched on (0 0 1)InP substrates by MBE. The ternary In0.9Al0.1As dots on InP was demonstrated for the first time. The struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a66b8b01f2deb2077a618645d1fc30c2
https://doi.org/10.1016/s0022-0248(99)00161-x
https://doi.org/10.1016/s0022-0248(99)00161-x
Autor:
Sun Zhongzhe, Yew Kuok Chuin
Publikováno v:
International Conference onIndium Phosphide and Related Materials, 2003..
InAsN/GaAsN quantum dots were grown on GaAs substrate by MBE. Structure and optical properties of single layer and multilayer dots were characterized and analyzed by photoluminescence and atomic force microscopy. High density InAsN dot (1.1/spl times
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07205edb81516b4a1076040d613ccb3d
https://doi.org/10.1109/iciprm.2003.1205413
https://doi.org/10.1109/iciprm.2003.1205413
Autor:
Zhao, Yongsheng, Devane, Gregory, Sun, Zhongzhe, Stair, Kathleen A, Liu, Ying, Du, Guotong, Chang, R P H
Publikováno v:
Semiconductor Science & Technology; 1997, Vol. 12 Issue 5, p576-579, 4p
Autor:
Zhao, Youngsheng, Liu, Ying, Jiang, Xiuying, Wang, Zhiling, Liu, Bao, Xing, Jin, Sun, Zhongzhe, Zhang, Xiaobo, Du, Guotong
Publikováno v:
Optical & Quantum Electronics; Nov1996, Vol. 28 Issue 11, p1685-1690, 6p