Zobrazeno 1 - 10
of 737
pro vyhledávání: '"Sun Xiaoqing"'
Autor:
Hu, Tao, Jia, Xinpei, Han, Runhao, Yang, Jia, Bai, Mingkai, Dai, Saifei, Chen, Zeqi, Ding, Yajing, Yang, Shuai, Han, Kai, Wang, Yanrong, Zhang, Jing, Zhao, Yuanyuan, Ke, Xiaoyu, Sun, Xiaoqing, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun
We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) gate structure. We find that the
Externí odkaz:
http://arxiv.org/abs/2411.08558
Sparse autoencoders have recently produced dictionaries of high-dimensional vectors corresponding to the universe of concepts represented by large language models. We find that this concept universe has interesting structure at three levels: 1) The "
Externí odkaz:
http://arxiv.org/abs/2410.19750
Autor:
Hu, Tao, Shao, Xianzhou, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Sun, Xiaoqing, Han, Runhao, Yang, Jia, Ke, Xiaoyu, Tian, Fengbin, Yang, Shuai, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun
We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. We find that the MW increases with the increasing th
Externí odkaz:
http://arxiv.org/abs/2406.15478
Autor:
Hu, Tao, Shao, Xianzhou, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Sun, Xiaoqing, Han, Runhao, Yang, Jia, Ke, Xiaoyu, Tian, Fengbin, Yang, Shuai, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun
We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases with thicker top SiO2. We realize the memory window of 6.3 V for 3.4 nm t
Externí odkaz:
http://arxiv.org/abs/2404.15825
Autor:
Hu, Tao, Sun, Xiaoqing, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Li, Tingting, Han, Runhao, Ding, Yajing, Fan, Hongyang, Zhao, Yuanyuan, Chai, Junshuai, Xu, Hao, Si, Mengwei, Wang, Xiaolei, Wang, Wenwu
In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting an Al2O3 dielectric interlayer between TiN gate metal and ferroelectric
Externí odkaz:
http://arxiv.org/abs/2312.16829
Knowledge tracing aims to model students' past answer sequences to track the change in their knowledge acquisition during exercise activities and to predict their future learning performance. Most existing approaches ignore the fact that students' ab
Externí odkaz:
http://arxiv.org/abs/2302.02146
Publikováno v:
In Theriogenology November 2024 229:147-157
Autor:
Han, Jingjing, Cong, Shengnan, Sun, Xiaoqing, Xie, Hongyan, Ni, Shiqian, Wu, Yaxuan, Wang, Mengyao, Zhang, Aixia
Publikováno v:
In Heliyon 15 October 2024 10(19)
Publikováno v:
In Reproductive Toxicology October 2024 129
Autor:
Sun, Xiaoqing, Wang, Rui, Cong, Shengnan, Fan, Xuemei, Sha, Lijuan, Feng, Jingyi, Xie, Hongyan, Han, Jingjing, Ni, Shiqian, Zhang, Aixia
Publikováno v:
In Journal of Psychiatric Research October 2024 178:78-87