Zobrazeno 1 - 10
of 1 672
pro vyhledávání: '"Sun Xiao-wei"'
For different alternating-sign multi-pulse trains electric fields with oscillation, the effects of the electric field pulse number and the relative phase of the combined electric field on pair production are investigated by solving quantum Vlasov equ
Externí odkaz:
http://arxiv.org/abs/2401.00903
Autor:
Wang, Haoran, Qian, Jingyu, Sun, Jiayun, Su, Tong, Lei, Shiming, Zhang, Xiaoyu, Choy, Wallace C. H., Sun, Xiao Wei, Wang, Kai, Zhao, Weiwei
Reduced-dimensional CsPbBr$_3$ nanoplatelets (NPLs) are promising candidates for color-saturated blue emitters, yet their electroluminescence performance is hampered by non-radiative recombination, which is associated with bromine vacancies. Here, we
Externí odkaz:
http://arxiv.org/abs/2306.13852
Individual relaxation dynamics of electrons and holes in optically pumped semiconductors is rarely observed due to their overlap. Here we report the individual dynamics of long-lived (~200 mks) holes observed at room temperature in a 10 nm thick film
Externí odkaz:
http://arxiv.org/abs/2212.02386
Publikováno v:
Journal of Applied Physics; 10/7/2024, Vol. 136 Issue 13, p1-10, 10p
Publikováno v:
Journal of Applied Physics; 9/28/2024, Vol. 136 Issue 12, p1-8, 8p
Publikováno v:
In Journal of Solid State Chemistry October 2024 338
Autor:
Xiao, Hui, Zhao, Jinyang, Li, Xuefei, Zhang, Hangchuan, Zhou, Miao, Cao, Weiran, Yan, Xiaolin, Zhang, Xin, Sun, Xiao Wei, Chen, Lixuan
Publikováno v:
In Nano Energy September 2024 128 Part B
Autor:
Wang, Xinwei, Liu, Zi-Jiang, Feng, Jin-Shan, Chen, Meng-Ru, Li, Liang, Sun, Xiao-Wei, Tian, Fubo
Publikováno v:
In Computational Materials Science September 2024 244
It is often taken for granted that in pump-probe experiments on the topological insulator (TI) Bi2Se3 using IR pumping with a commercial Ti:Sapphire laser [~800 nm (1.55 eV photon energy)], the electrons are excited in the one-photon absorption regim
Externí odkaz:
http://arxiv.org/abs/2112.10294
Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi2Se3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi2Se3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices
Externí odkaz:
http://arxiv.org/abs/2111.05298