Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Sun Ho Oh"'
Autor:
Sung-Kyu Kwon, Hyuk-Min Kwon, In-Shik Han, Jae-Hyung Jang, Sun-Ho Oh, Hyeong-Sub Song, Byoung-Seok Park, Yi-Sun Chung, Jung-Hwan Lee, Si-Bum Kim, Ga-Won Lee, Hi-Deok Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 808-814 (2018)
The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The $\Delta $ VT degradation that represents device lifetime of p-MOSFETs with fluorine
Externí odkaz:
https://doaj.org/article/2a406b49b2d840f8b0cb65bc20a19421
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 18:160-166
Autor:
Jung-Hwan Lee, In-Shik Han, Si-Bum Kim, Sun-Ho Oh, Hyuk-Min Kwon, Yi-Sun Chung, Jae-Hyung Jang, Sung-Kyu Kwon, Hyeong-Sub Song, Ga-Won Lee, Hi-Deok Lee, Byoung-Seok Park
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 808-814 (2018)
The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The $\Delta $ VT degradation that represents device lifetime of p-MOSFETs with fluorine
Autor:
Sung-Kyu Kwon, Choul-Young Kim, Jong-Kwan Shin, Jin-Woong Jeong, Jae-Nam Yu, Seong-Yong Jang, Ga-Won Lee, Hi-Deok Lee, Sun-Ho Oh, Hyeong-Sub Song
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 15:312-317
In this paper, the RF characteristics of multi-finger MOSFETs were improved by decreasing the parasitic capacitance in spite of increased gate resistance in a 90-nm CMOS technology. Two types of device structures were designed to compare the parasiti
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 27:792-796
Autor:
Hyuk-Min Kwon, Sung Kwen Oh, Sung Kyu Kwon, Tae-Woo Kim, Woon-Il Choi, Paul Kirsch, Kwang Seok Jeong, Byoung Hun Lee, Sun Ho Oh, Hi Deok Lee, Dae-Hyun Kim, Chang Yong Kang
Publikováno v:
IEEE Transactions on Electron Devices. 61:2619-2627
A correlation between reliability characteristics and failure mechanisms for time-dependent dielectric breakdown for a single ZrO 2 metal-insulator-metal capacitor has been studied. Frenkel-Poole emission was the dominant mechanism in the high electr
Autor:
Hyung-Sub Song, Ga-Won Lee, Jong-Kwan Shin, Jae-Nam Yu, Sung-Yong Jang, Ho-Ryung Lee, Sung-Kyu Kwon, Hi-Deok Lee, Sun-Ho Oh
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 27:438-442
Channel length dependence of NBTI (negative bias temperature instablilty) and CHC (channel hot carrier) characteristics in PMOSFET is studied. It has been considered that HC lifetime of PMOSFET is larger than NBTI lifetime. However, it is shown that
Autor:
Jin-Woong Jung, Sung-Yong Jang, Sung-Kyu Kwon, Jae-Nam Yu, Ga-Won Lee, Choul-Young Kim, Hi-Deok Lee, Sun-Ho Oh, Jong-Kwan Shin
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 27:356-360
Autor:
Seong-Yong Jang, Ga-Won Lee, Choul-Young Kim, Sung-Kyu Kwon, Jin-Woong Jeong, Hi-Deok Lee, Jae-Nam Yu, Sun-Ho Oh
Publikováno v:
Proceedings of the 2015 International Conference on Microelectronic Test Structures.
This paper presents a newly proposed T-model of spiral inductors in 90nm radio frequency (RF) CMOS technology. Inductor modeling is one of the most difficult problems facing silicon-based RF integrated circuit designers, and the inclusion of many par
Autor:
Hi-Deok Lee, Sun-Ho Oh, Jae-Nam Yu, Sung-Kyu Kwon, Seung-Yong Sung, Hyuk-Min Kwon, Ga-Won Lee
Publikováno v:
Japanese Journal of Applied Physics. 53:08LA03
In this paper, the effect of fluorine implantation on the recovery characteristics of p-channel MOSFETs (PMOSFETs) after negative bias temperature instability (NBTI) stress was investigated. PMOSFETs using fluorine ion implantation (F-I/I) performed