Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Sun, Zhongzhe"'
Autor:
Sun, Zhongzhe *, Wu, Ju, Chen, Yonghai, Liu, Fengqi, Ding, Ding, Li, Yuefa, Xu, Bo, Wang, Zhanguo
Publikováno v:
In Journal of Crystal Growth 2000 218(2):203-208
Publikováno v:
Journal of Applied Physics; May2002, Vol. 91 Issue 9, p6021, 6p, 1 Black and White Photograph, 3 Diagrams, 1 Chart
Publikováno v:
Journal of Crystal Growth. 259:40-46
InAsN quantum dots were grown on GaAs (0 0 1) substrate by a solid source molecular beam epitaxy (SSMBE) system equipped with a radio-frequency (RF) nitrogen plasma source. The quantum dot formation was confirmed by reflection high-energy electron di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b3bbb825c11630ef0ec2f91d9f16dc
https://doi.org/10.1016/s0022-0248(03)01580-x
https://doi.org/10.1016/s0022-0248(03)01580-x
Autor:
Ng Tien Khee, Loke Wan Khai, Sun Zhongzhe, Fan Weijun, Yoon Soon Fatt, Yew Kuok Chuin, Wang Shanzhong
Publikováno v:
Journal of Applied Physics. 94:1069-1073
GaAsN was grown by molecular beam epitaxy equipped with a radio frequency nitrogen plasma source. The N incorporation behaviors were investigated using a series of samples grown at different growth rates, As4/Ga ratios, and nitrogen fluxes within a g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a3e1362ef3406c6a28d630b84d5933d
https://doi.org/10.1063/1.1582554
https://doi.org/10.1063/1.1582554
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 8:164-169
In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates;
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55f5b310ef683fe8524d0a5eb509d37
https://doi.org/10.1016/s1386-9477(00)00134-x
https://doi.org/10.1016/s1386-9477(00)00134-x
Autor:
Liu Feng-Qi, Wang Zhan-Guo, Chen Yong-Hai, Jiang Wei-hong, Ye Xiaoling, Sun Zhongzhe, Xu Huai-zhe, Wu Ju, Xu Bo
Publikováno v:
Journal of Applied Physics. 88:533-536
Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f23381f04b805f45c595acc2875c77d1
https://doi.org/10.1063/1.373691
https://doi.org/10.1063/1.373691
Publikováno v:
Journal of Crystal Growth. 204:24-28
InAs and In0.9Al0.1As self-assembled quantum dots have been grown by Stranski-Krastanow growth mode on In0.52Al0.48As lattice-matched on (0 0 1)InP substrates by MBE. The ternary In0.9Al0.1As dots on InP was demonstrated for the first time. The struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a66b8b01f2deb2077a618645d1fc30c2
https://doi.org/10.1016/s0022-0248(99)00161-x
https://doi.org/10.1016/s0022-0248(99)00161-x
Autor:
Sun zhongzhe, Yew Kuok Chuin
Publikováno v:
International Conference on Indium Phosphide & Related Materials, 2003; 2003, p448-451, 4p
Autor:
Zhao, Yongsheng, Devane, Gregory, Sun, Zhongzhe, Stair, Kathleen A, Liu, Ying, Du, Guotong, Chang, R P H
Publikováno v:
Semiconductor Science & Technology; 1997, Vol. 12 Issue 5, p576-579, 4p
Autor:
Zhao, Youngsheng, Liu, Ying, Jiang, Xiuying, Wang, Zhiling, Liu, Bao, Xing, Jin, Sun, Zhongzhe, Zhang, Xiaobo, Du, Guotong
Publikováno v:
Optical & Quantum Electronics; Nov1996, Vol. 28 Issue 11, p1685-1690, 6p