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Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering

Autor: Wu, Mengqi, Lou, Zhefeng, Dai, Chen-Min, Wang, Tao, Wang, Jiaqi, Zhu, Ziye, Xu, Zhuokai, Sun, Tulai, Li, Wenbin, Zheng, Xiaorui, Lin, Xiao

Phase engineering by strains in 2D semiconductors is of great importance for a variety of applications. Here, we present a study of strain induced ferroelectric (FE) transition on bismuth oxyselenide (Bi$_2$O$_2$Se) films, a high-performance (HP) sem

Externí odkaz: http://arxiv.org/abs/2303.02882

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Commensurate stacking phase transitions in an intercalated transition metal dichalcogenide

Intercalation and stacking order modulation are two active ways in manipulating the interlayer interaction of transition metal dichalcogenides (TMDCs), which lead to a variety of emergent phases and allow for engineering material properties. Herein,

Externí odkaz: http://arxiv.org/abs/2112.08248

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High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

Autor: Deng, Yunzhou, Peng, Feng, Lu, Yao, Zhu, Xitong, Jin, Wangxiao, Qiu, Jing, Dong, Jiawei, Hao, Yanlei, Di, Dawei, Gao, Yuan, Sun, Tulai, Wang, Linjun, Ying, Lei, Huang, Fei, Jin, Yizheng

Quantum-dot light-emitting diodes (QD-LEDs) promise a new generation of efficient, low-cost, large-area, and flexible electroluminescent devices. However, the inferior performance of green and blue QD-LEDs is hindering the commercialization of QD-LED

Externí odkaz: http://arxiv.org/abs/2111.11752

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