Zobrazeno 1 - 10
of 152
pro vyhledávání: '"Sun, Rujun"'
Autor:
Roy, Saurav, Chmielewski, Adrian E., Bhattacharyya, Arkka, Ranga, Praneeth, Sun, Rujun, Scarpulla, Michael A., Alem, Nasim, Krishnamoorthy, Sriram
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ as a potentially better alternative to
Externí odkaz:
http://arxiv.org/abs/2103.15280
Autor:
Sun, Rujun, Ooi, Yu Kee, Bhattacharyya, Arkka, Saleh, Muad, Krishnamoorthy, Sriram, Lynn, Kelvin G., Scarpulla, Michael A.
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-G
Externí odkaz:
http://arxiv.org/abs/2011.03657
Autor:
Sun, Rujun, Ooi, Yu Kee, Ranga, Praneeth, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Scarpulla, Michael A.
In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures
Externí odkaz:
http://arxiv.org/abs/2009.14741
Autor:
Ranga, Praneeth, Bhattacharyya, Arkka, Chmielewski, Adrian, Roy, Saurav, Sun, Rujun, Scarpulla, Michael A., Alem, Nasim, Krishnamoorthy, Sriram
Publikováno v:
Appl. Phys. Express 14 025501 (2021)
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxG
Externí odkaz:
http://arxiv.org/abs/2009.10952
Currently, Fe doping in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features have been reported from multiple types of Ga2O3 samples including Fe-d
Externí odkaz:
http://arxiv.org/abs/2007.11135
Autor:
Li, Mingzhen, Liu, Changxi, Liao, Jianjin, Zheng, Xuegui, Yang, Hailong, Sun, Rujun, Xu, Jun, Gan, Lin, Yang, Guangwen, Luan, Zhongzhi, Qian, Depei
The flourish of deep learning frameworks and hardware platforms has been demanding an efficient compiler that can shield the diversity in both software and hardware in order to provide application portability. Among the existing deep learning compile
Externí odkaz:
http://arxiv.org/abs/1904.07404
Akademický článek
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Autor:
Lyu, Xunyan, Zhuang, Daming, Zhao, Ming, Zhang, Ning, Yu, Xinping, Zhang, Leng, Sun, Rujun, Wei, Yaowei, Peng, Xiao, Wu, Yixuan, Ren, Guoan, Wei, Jinquan
Publikováno v:
In Applied Surface Science 15 April 2019 473:848-854
Autor:
Wei, Yaowei, Zhuang, Daming, Zhao, Ming, Gong, Qianming, Sun, Rujun, Ren, Guoan, Wu, Yixuan, Zhang, Leng, Lyu, Xunyan, Peng, Xiao, Wei, Jinquan
Publikováno v:
In Journal of Alloys and Compounds 30 January 2019 773:689-697
Autor:
Wei, Yaowei, Zhuang, Daming, Zhao, Ming, Gong, Qianming, Sun, Rujun, Zhang, Leng, Lyu, Xunyan, Peng, Xiao, Ren, Guoan, Wu, Yixuan, Wei, Jinquan
Publikováno v:
In Journal of Alloys and Compounds 30 July 2018 755:224-230