Zobrazeno 1 - 10
of 218
pro vyhledávání: '"Sun, Jonathan"'
Autor:
Chen, Dairong, Wyporek, Augustin Couton, Chailloleau, Pierre, Valli, Ahmed Sidi El, Morone, Flaviano, Mangin, Stephane, Sun, Jonathan Z., Sels, Dries, Kent, Andrew D.
Magnetic Tunnel Junctions (MTJs) are of great interest for non-conventional computing applications. The Toffoli gate is a universal reversible logic gate, enabling the construction of arbitrary boolean circuits. Here, we present a proof-of-concept co
Externí odkaz:
http://arxiv.org/abs/2411.00203
Publikováno v:
Applied Physics Letters 120, 160502 (2022)
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical mechanisms
Externí odkaz:
http://arxiv.org/abs/2201.03671
The Ising machine is an unconventional computing architecture that can be used to solve NP-hard combinatorial optimization problems more efficiently than traditional von Neumann architectures. Fast, compact oscillator networks which provide programma
Externí odkaz:
http://arxiv.org/abs/2110.08885
Autor:
Safranski, Christopher, Kaiser, Jan, Trouilloud, Philip, Hashemi, Pouya, Hu, Guohan, Sun, Jonathan Z
Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random number gene
Externí odkaz:
http://arxiv.org/abs/2010.14393
Akademický článek
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Publikováno v:
Phys. Rev. Lett. 124, 197204 (2020)
An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A CoNi multilay
Externí odkaz:
http://arxiv.org/abs/1910.08039
Publikováno v:
Phys. Rev. B 100, 014435 (2019)
A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high-bias, additional error processes
Externí odkaz:
http://arxiv.org/abs/1905.13253
Publikováno v:
IEEE Magnetics Letters (2019)
Binary stochastic neurons (BSN's) form an integral part of many machine learning algorithms, motivating the development of hardware accelerators for this complex function. It has been recognized that hardware BSN's can be implemented using low barrie
Externí odkaz:
http://arxiv.org/abs/1902.03650
Autor:
Kaiser, Jan, Rustagi, Avinash, Camsari, Kerem Y., Sun, Jonathan Z., Datta, Supriyo, Upadhyaya, Pramey
Publikováno v:
Phys. Rev. Applied 12, 054056 (2019)
Fast magnetic fluctuations due to thermal torques have useful technological functionality ranging from cryptography to probabilistic computing. The characteristic time of fluctuations in typical uniaxial anisotropy magnets studied so far is bounded f
Externí odkaz:
http://arxiv.org/abs/1902.03312
Magnetism primarily describes the physics and materials science of systems presenting a magnetization -- a macroscopic order parameter characterizing electron angular momentum. The order parameter is associated with the electronic exchange interactio
Externí odkaz:
http://arxiv.org/abs/1810.04591