Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sun, Jianshi"'
Autor:
Sun, Jianshi, Li, Shouhang, Shao, Cheng, Tong, Zhen, An, Meng, Yao, Yuhang, Hu, Yue, Zhu, Xiongfei, Liu, Yifan, Wang, Renzong, Liu, Xiangjun, Frauenheim, Thomas
As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperatur
Externí odkaz:
http://arxiv.org/abs/2410.19576
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, Xie, Han, An, Meng, Zhang, Chuang, Zhu, Xiongfei, Huang, Chen, Xiong, Yucheng, Liu, Xiangjun
Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desire
Externí odkaz:
http://arxiv.org/abs/2406.12187
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, An, Meng, Zhu, Xiongfei, Zhang, Chuang, Chen, Xiangchuan, Xiong, Yucheng, Frauenheim, Thomas, Liu, Xiangjun
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly lim
Externí odkaz:
http://arxiv.org/abs/2406.02874
Autor:
Sun, Jianshi, Liu, Xiangjun, Xiong, Yucheng, Yao, Yuhang, Yang, Xiaolong, Shao, Cheng, Li, Shouhang
Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering has extre
Externí odkaz:
http://arxiv.org/abs/2403.03673
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, Chen, Xiangchuan, Liu, Qianqian, Xiong, Yucheng, An, Meng, Liu, Xiangjun
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy dopi
Externí odkaz:
http://arxiv.org/abs/2401.02133
Autor:
Liu, Qianqian, Liu, Xiangjun, Chen, Ge, Feng, Pei, Xiong, Yucheng, An, Meng, Shao, Cheng, Zhu, Xiongfei, Wang, Renzong, Sun, Jianshi, Sun, Jisheng, Guo, Chunfang, Bi, Siyi, Li, Shouhang
Publikováno v:
In Desalination 19 August 2024 583
Publikováno v:
Journal of Physical Chemistry C; 9/7/2023, Vol. 127 Issue 35, p17567-17574, 8p
Publikováno v:
Molecular Medicine Reports; Nov2021, Vol. 24 Issue 5, pN.PAG-N.PAG, 1p
Autor:
Sun J; Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai 201620, People's Republic of China., Li S; Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai 201620, People's Republic of China.; Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France., Tong Z; School of Advanced Energy, Sun Yat-Sen University, Shenzhen 518107, People's Republic of China., Shao C; Thermal Science Research Center, Shandong Institute of Advanced Technology, Jinan, Shandong 250103, People's Republic of China., An M; Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan., Zhu X; Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai 201620, People's Republic of China., Zhang C; Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai 201620, People's Republic of China., Chen X; Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai 201620, People's Republic of China., Wang R; Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai 201620, People's Republic of China., Xiong Y; Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai 201620, People's Republic of China., Frauenheim T; School of Science, Constructor University, Bremen 28759, Germany.; Institute for Advanced Study, Chengdu University, Chengdu 610106, People's Republic of China., Liu X; Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai 201620, People's Republic of China.
Publikováno v:
Nano letters [Nano Lett] 2024 Aug 28; Vol. 24 (34), pp. 10569-10576. Date of Electronic Publication: 2024 Aug 06.