Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Summer F.C. Tseng"'
Publikováno v:
Microelectronics Reliability. 44:1233-1243
In this paper, some practical considerations for effective and efficient wafer-level reliability control (WLRC) are presented. We propose a better solution to replace the previous method by adding a protection diode to avoid process induced charging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f5757dc2ffb9dc4f40ec78bab4c9a7
https://doi.org/10.1016/j.microrel.2004.04.009
https://doi.org/10.1016/j.microrel.2004.04.009
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 52:1458-1467
Wafer-level reliability (WLR) testing receives much attention and becomes a major tool for process reliability qualification and in-line monitoring because WLR can provide real-time results for timely improvements. This in-situ test capability is gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381db831ee4d7e8cce52cd73f024faee
https://doi.org/10.1109/tim.2003.818543
https://doi.org/10.1109/tim.2003.818543
Publikováno v:
Microelectronics Reliability. 43:713-724
This paper depicts the improvement of poly-silicon (poly-Si) holes induced failures during gate oxide integrity (GOI) voltage-ramp (V-Ramp) tests by replacing plasma enhanced oxidation with silicon rich oxidation (SRO), which is cap oxide on transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::197624b6f8448603a3c8fd234c9a10a7
https://doi.org/10.1016/s0026-2714(03)00059-3
https://doi.org/10.1016/s0026-2714(03)00059-3
Publikováno v:
IEEE International Integrated Reliability Workshop Final Report, 2004.
An innovative multi-via test structure is developed for the isothermal electromigration (Iso-EM) test, which is a well-known wafer-level reliability (WLR) test methodology. The proposed test structure consists of a metal line with more than one via a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf2e6712e2cb2678b30c42133767b6a0
https://doi.org/10.1109/irws.2004.1422762
https://doi.org/10.1109/irws.2004.1422762