Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction.

Autor: Hamachi, T., Tohei, T., Hayashi, Y., Usami, S., Imanishi, M., Mori, Y., Sumitani, K., Imai, Y., Kimura, S., Sakai, A.

Publikováno v: Journal of Applied Physics; 6/14/2024, Vol. 135 Issue 22, p1-10, 10p

Diffracted diffraction radiation and its application to beam diagnostics

Autor: Goponov, Yu.A., Shatokhin, R.A., Sumitani, K., Syshchenko, V.V., Takabayashi, Y., Vnukov, I.E. ^*

Publikováno v: In Nuclear Inst. and Methods in Physics Research, A 21 March 2018 885:134-138

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction.

Autor: Shida, K., Takeuchi, S., Tohei, T., Miyake, H., Hiramatsu, K., Sumitani, K., Imai, Y., Kimura, S., Sakai, A.

Publikováno v: Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 7p, 2 Diagrams, 1 Chart, 5 Graphs

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Control of dislocation morphology and lattice distortion in Na-flux GaN crystals.

Autor: Takeuchi, S., Mizuta, Y., Imanishi, M., Imade, M., Mori, Y., Sumitani, K., Imai, Y., Kimura, S., Sakai, A.

Publikováno v: Journal of Applied Physics; 2017, Vol. 122 Issue 10, p1-6, 6p, 1 Color Photograph, 1 Black and White Photograph, 4 Diagrams, 1 Chart, 2 Graphs