Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Sumit Kale"'
Autor:
Anil Kumar, Sumit Kale
Publikováno v:
IETE Journal of Research. :1-14
Autor:
Prashanth Kumar, Papanasam Esakki, Lucky Agarwal, null PeddaKrishna, Sumit Kale, Brinda Bhowmick
Publikováno v:
Silicon. 15:25-35
Publikováno v:
Silicon. 14:12223-12233
Publikováno v:
Silicon. 14:10957-10966
Autor:
Tanvika Garg, Sumit Kale
Publikováno v:
Microelectronics Reliability. 145:114998
Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation
Publikováno v:
Silicon. 14:4053-4062
In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incor
Autor:
Sumit Kale, Madduri Sai Chandu
Publikováno v:
Silicon. 14:935-941
In this paper, to solve the problem of higher ambipolar leakage current (Iambipolar) of Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS SBMOS), we have incorporated dual metal gate (DMG) in place of single metal
Autor:
Sumit Kale
Publikováno v:
IETE Journal of Research. 69:404-409
In this paper, I have presented a simulation study to suppress the ambipolar current of the Schottky Barrier (SB) MOSFET. In this work, I have used a dual metal gate device structure. The gate of t...
Autor:
Sumit Kale, N. K. Hema Latha
Publikováno v:
Silicon. 12:2673-2679
This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET) as label free biosensor applications. In a proposed device, we have created a nanogap cavity within the gate dielectric near the source end for sensing biomolecul
Publikováno v:
ICT Systems and Sustainability ISBN: 9789811659867
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b4888ae9c63492c74ffc5e1cb220b7
https://doi.org/10.1007/978-981-16-5987-4_21
https://doi.org/10.1007/978-981-16-5987-4_21