Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sumio Sugisaki"'
Autor:
Yuta Takishita, Masaki Kobayashi, Kazuki Hattori, Tokiyoshi Matsuda, Sumio Sugisaki, Yasuhiko Nakashima, Mutsumi Kimura
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035112-035112-4 (2020)
A memristor property of an amorphous Sn–Ga–O (α-TGO) thin-film device deposited using a mist chemical-vapor-deposition (mist-CVD) method has been found. The α-TGO device can be manufactured at a low cost because it does not include rare metals
Externí odkaz:
https://doaj.org/article/df763d89af4243e79b53b809c1e3f9ca
Publikováno v:
2022 29th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aba14d1239abe3c78580bd5ebe4d33d
https://doi.org/10.23919/am-fpd54920.2022.9851307
https://doi.org/10.23919/am-fpd54920.2022.9851307
Autor:
Mutsumi Kimura, Tomoya Kameda, Atsushi Kondo, Tokiyoshi Matsuda, Toshimasa Hori, Ayata Kurasaki, Yasuhiko Nakashima, Takumi Tsuno, Ryo Tanaka, Kaito Hashimoto, Kenta Umeda, Sumio Sugisaki, Junpei Shimura, Keisuke Ikushima
Publikováno v:
ECS Transactions. 90:157-166
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bea4940d35b5948dad58196da9c5938a
https://doi.org/10.1149/09001.0157ecst
https://doi.org/10.1149/09001.0157ecst
Autor:
Ryohei Morita, Tomoya Kameda, Sumio Sugisaki, Mutsumi Kimura, Tokiyoshi Matsuda, Yasuhiko Nakashima
Publikováno v:
Neurocomputing. 248:112-119
We have developed a cellular neural network formed by simplified processing elements composed of thin-film transistors. First, we simplified the neuron circuit into a two-inverter two-switch circuit and the synapse device into only a transistor. Next
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d5ce91a20b6b7764fd096ce89c1bc1
https://doi.org/10.1016/j.neucom.2016.10.085
https://doi.org/10.1016/j.neucom.2016.10.085
Autor:
Ryo Tanaka, Mutsumi Kimura, Mamoru Furuta, Tokiyoshi Matsuda, Daichi Koretomo, Ayata Kurasaki, Yusaku Magari, Sumio Sugisaki
Publikováno v:
Materials
Volume 12
Issue 19
Materials, Vol 12, Iss 19, p 3236 (2019)
Volume 12
Issue 19
Materials, Vol 12, Iss 19, p 3236 (2019)
We have found a memristive characteristic of an amorphous Ga-Sn-O (&alpha
GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lo
GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::785c35253f1c7e6db3e342c9d321e708
Autor:
Mutsunori Uenuma, Sumio Sugisaki, Mamoru Furuta, Toshihide Nabatame, Tokiyoshi Matsuda, Mutsumi Kimura, Takahito Imai, Daichi Koretomo, Yasuhiko Nakashima, Yusaku Magari
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
Scientific Reports
Scientific Reports
We have found a memristive characteristic of an α-GTO thin-film device. The α-GTO thin-film layer is deposited using radio-frequency (RF) magnetron sputtering at room temperature and sandwiched between the Al top and bottom electrodes. It is found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27ffead6e9c7f4dcabf2838b31354bae
https://doi.org/10.1038/s41598-019-39549-9
https://doi.org/10.1038/s41598-019-39549-9
Publikováno v:
SID Symposium Digest of Technical Papers. 52:337-337
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cd350af76fe33296c42ffb0f8cd38e1
https://doi.org/10.1002/sdtp.14485
https://doi.org/10.1002/sdtp.14485
Autor:
Masaki Kobayashi, Kazuki Hattori, Mutsumi Kimura, Yuta Takishita, Tokiyoshi Matsuda, Sumio Sugisaki, Yasuhiko Nakashima
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035112-035112-4 (2020)
A memristor property of an amorphous Sn–Ga–O (α-TGO) thin-film device deposited using a mist chemical-vapor-deposition (mist-CVD) method has been found. The α-TGO device can be manufactured at a low cost because it does not include rare metals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d19113a160cd4997cee208228dbb53ed
https://doaj.org/article/df763d89af4243e79b53b809c1e3f9ca
https://doaj.org/article/df763d89af4243e79b53b809c1e3f9ca
Publikováno v:
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
In this presentation, we propose an amorphous oxide semiconductors (AOSs) In-Ga-Zn-O(IGZO) thin film for a memristor characteristic device. We fabricated the memristor characteristic device active layer using IGZO and electrodes using aluminum by phy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d8339572d2a6b93300de99e85104b4e
https://doi.org/10.1109/imfedk.2018.8581953
https://doi.org/10.1109/imfedk.2018.8581953
Publikováno v:
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We are developing neural networks using thin-film transistors (TFTs). By adopting an interconnect-type neural network and utilizing a characteristic degradation of poly-Si TFTs as a variable strength of synapse connection, which was originally an iss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f940cb61e6062a6181a34e4ae16c590
https://doi.org/10.1109/imfedk.2016.7521689
https://doi.org/10.1109/imfedk.2016.7521689