Interface analysis of oxide free MoS 2 films fabricated by solution process.

Autor: Alam MI; Research Institute for Semiconductor Engineering, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8530, Japan. iftekhar@hiroshima-u.ac.jp., Sumichika R; Graduate School of Advanced Science and Engineering, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8530, Japan., Tsuchimoto J; Research Institute for Semiconductor Engineering, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8530, Japan., Komeda T; Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980 -0877, Japan., Teramoto A; Research Institute for Semiconductor Engineering, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8530, Japan. teramo10@hiroshima-u.ac.jp.; Graduate School of Advanced Science and Engineering, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8530, Japan. teramo10@hiroshima-u.ac.jp.; Research Institute for Synchrotron Radiation Science, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-0046, Japan. teramo10@hiroshima-u.ac.jp.

Publikováno v: Scientific reports [Sci Rep] 2024 Nov 05; Vol. 14 (1), pp. 26779. Date of Electronic Publication: 2024 Nov 05.