Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Sumant Sood"'
Publikováno v:
ECS Transactions. 27:801-806
Temporary bonding attaches substrates to a carrier so that after thinning to the desired thickness further backside fabrications steps can be conducted with "normal" process flows in standard semiconductor equipment. The selection of a suitable tempo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9153751dba869b2dc08a1b6d57f5a4c7
https://doi.org/10.1149/1.3360713
https://doi.org/10.1149/1.3360713
Publikováno v:
ECS Transactions. 33:17-26
Diffusion and eutectic bonding are gaining broad acceptance in 3D integration and packaging. Many bonding schemes are based on copper because this material is used extensively in FEOL, has a well developed CMP history and high yield TSV's have been p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42d237cd2fcfa6fcbb11571dc1023e85
https://doi.org/10.1149/1.3483490
https://doi.org/10.1149/1.3483490
Autor:
Jürgen Burggraf, Julian Bravin, Sina Jahanbin, Markus Wimplinger, Sumant Sood, Paul Lindner, Thomas Uhrmann, Prashant Aji, Jie Gong, Rohit Bhat
Publikováno v:
2015 IEEE 65th Electronic Components and Technology Conference (ECTC).
As 3D-TSV technology based solutions are moving into volume manufacturing, monitoring of the processed device wafer through temporary bonding, thinning, TSV reveal, metallization and de-bonding processes remains a key yield concern. Edge chipping, mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3fd7577cf92935cd7295824b2656aee
https://doi.org/10.1109/ectc.2015.7159827
https://doi.org/10.1109/ectc.2015.7159827
Autor:
Rona Belford, Sumant Sood
Publikováno v:
ECS Transactions. 3:99-106
We present various pre-bonding treatments in conjunction with co-implantation cleaving kinetics en route to producing strained silicon on quartz (SSOQ). This surface activation study presents the ground work for elevated temperature bonding required
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f74e58200c8794c2ace5aedb7d14b4af
https://doi.org/10.1149/1.2357059
https://doi.org/10.1149/1.2357059
Autor:
Alain Phommahaxay, Youssef Travaly, T. Buisson, Peter Bisson, Dan Wallace, Sumant Sood, Mark Privett, Bart Swinnen, Eric Beyne, Anne Jourdain
Publikováno v:
3DIC
Thin wafer handling has become a very challenging topic of emerging 3D technologies, and temporary wafer bonding to a carrier support wafer is one way to guarantee the required mechanical stability and rigidity to the thin wafer during subsequent bac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c060231cfddf929160a8a683a129120b
https://doi.org/10.1109/3dic.2010.5751468
https://doi.org/10.1109/3dic.2010.5751468
Publikováno v:
3DIC
While several methods are available and in production for power devices, LED or other markets, 200mm and 300mm temporary bonding for 3D integration is a quite new field for material and equipment suppliers and challenging all participants in the supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25cf7a13ed731ed550aaf26cdb772783
https://doi.org/10.1109/3dic.2010.5751478
https://doi.org/10.1109/3dic.2010.5751478
Autor:
Jan Van Olmen, Anne Jourdain, Sumant Sood, Shari Farrens, Philippe Soussan, Alain Phommahaxay, Cedric Huyghebaert, Yann Civale
Publikováno v:
2010 IEEE International Interconnect Technology Conference.
In this paper we report on the use of Silicon wafer to wafer bonding technology using Trough Silicon Vias (TSV) and Cu to Cu hybrid interconnects. We demonstrate that multiple wiring levels of two separate wafers, can be interconnected on a full wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3eb98832f8f9f2e0f1a275fca27fe40
https://doi.org/10.1109/iitc.2010.5510444
https://doi.org/10.1109/iitc.2010.5510444
Publikováno v:
ECS Meeting Abstracts. :1718-1718
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd70991b74527ef2b186ef40fa2487a6
https://doi.org/10.1149/ma2010-02/27/1718
https://doi.org/10.1149/ma2010-02/27/1718
Autor:
Shari Farrens, Sumant Sood
Publikováno v:
ECS Meeting Abstracts. :1706-1706
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17cc0cbd79d4d9ef8dcc1c1af556d2c2
https://doi.org/10.1149/ma2010-02/27/1706
https://doi.org/10.1149/ma2010-02/27/1706
Publikováno v:
ECS Meeting Abstracts. :1695-1695
There is a growing demand for MEMS wafer packaging processes where the CMOS wafer can be bonded to a MEMS wafer using CMOS foundry compatible materials. Most current MEMS packaging applications either use glass frit and anodic bonding or metals such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f72c5b81cc1f4bd983fc46a350e927a
https://doi.org/10.1149/ma2010-02/27/1695
https://doi.org/10.1149/ma2010-02/27/1695