Zobrazeno 1 - 1
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pro vyhledávání: '"Suman Tenugu"'
Autor:
Byungki Woo, Tai-Yuan Tseng, Jang Yong Kang, Nima Mokhlesi, M. Watanabe, Ruchi Puri, Pavithra Souriraj, Hao Nguyen, Kwang-ho Kim, Jim Chan, Ritu Shrivastava, Alex Chu, Farookh Moogat, Raul Adrian Cernea, Seungpil Lee, Jong Yuh, Emilio Yero, Mitsuaki Honma, Mehrdad Mofidi, Venky Ramachandra, Feng Pan, Grishma Shah, Kazumi Ino, Sharon Huynh, Hung-Szu Lin, Yan Li, Chen Chen, Viski Popuri, Khandker N. Quader, Ken Oowada, Jason Li, Tuan Pham, Madpur Ravindra Arjun, Yoshihisa Watanabe, Ray Gao, Cuong Quoc Trinh, James Lan, Min She, Yi-Chieh Chen, Cynthia Hsu, Yi-Fang Chen, Masaaki Higashitani, Suman Tenugu, Daniel Yang, Khin Htoo, Binh Quang Le, Yupin Fong, Jonathan Huynh, Teruhiko Kamei, Qui Nguyen, Dinesh Tadepalli, William Mak, Behdad Azarbayjani, Patrick Hong, Long Pham, Frank Tsai
Publikováno v:
ISSCC
Since the first 3b/cell (X3) NAND flash memory paper in ISSCC 2008 [1], market demand for applications using high-density low-cost flash memory such as tablets, smart phones, and SSDs, has increased rapidly. Various electronic devices already use X3