Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Suman Jaiswal"'
Autor:
SUMAN JAISWAL
106
When devices are designed in a demanding market like automotive industry, safety devices, sensors, led drivers, switching power supply, etc accurate and consistent assessment methods to evaluate quickly the quality, reliability, robustness a
When devices are designed in a demanding market like automotive industry, safety devices, sensors, led drivers, switching power supply, etc accurate and consistent assessment methods to evaluate quickly the quality, reliability, robustness a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ueb5dd
Autor:
Nurul Azam, Matthew G. Boebinger, Suman Jaiswal, Raymond R. Unocic, Parvin Fathi-Hafshejani, Masoud Mahjouri-Samani
Publikováno v:
ACS Applied Nano Materials. 5:9129-9139
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a7371daa14f2c7c415b560dc0e0cce
https://doi.org/10.1021/acsanm.2c01458
https://doi.org/10.1021/acsanm.2c01458
Autor:
Parvin Fathi-Hafshejani, Nurul Azam, Suman Jaiswal, Lu Wang, Marcelo Kuroda, Michael C. Hamilton, Sahar Hasim, Masoud Mahjouri-Samani
Publikováno v:
Frontiers in Biological Detection: From Nanosensors to Systems XV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::124a7b6cdc4d42e22e5751dba420d801
https://doi.org/10.1117/12.2650741
https://doi.org/10.1117/12.2650741
Publikováno v:
Medical Engineering & Physics. 115:103973
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddea9d3d2cd6b9f403080c0d868b4476
https://doi.org/10.1016/j.medengphy.2023.103973
https://doi.org/10.1016/j.medengphy.2023.103973
Publikováno v:
Mechanics Research Communications. 129:104098
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::015d3ac0f1206c5852b9b6739f49f5e1
https://doi.org/10.1016/j.mechrescom.2023.104098
https://doi.org/10.1016/j.mechrescom.2023.104098
Publikováno v:
2D Photonic Materials and Devices V.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a22782b349f670f0c9611d609e5226aa
https://doi.org/10.1117/12.2609921
https://doi.org/10.1117/12.2609921
Publikováno v:
Journal of Statistics Applications & Probability Letters. 3:71-81
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac46900502c64a720ddcba7dab1de25
https://doi.org/10.18576/jsapl/030202
https://doi.org/10.18576/jsapl/030202
Publikováno v:
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC).
This paper investigates the failure mechanism of Ultra High Voltage JFET (UHV-JFET) under Unclamped Inductive Switching (UIS) test. We explain the ruggedness failure of the Power MOSFETs based on drain impact ionization event, diffusion current flowi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffe0721c05f7b18d3c22f3e5a4c85b9
https://doi.org/10.1109/edssc.2017.8126546
https://doi.org/10.1109/edssc.2017.8126546
Autor:
Suman Jaiswal, S. Krishna Sai, Chirag Aryadeep, Muntha Sai Dheeraj, Gene Sheu, Chen Po-An, Shaik Mastanbasheer, Sivaji Selvendran, Syed Neyaz Imam
Publikováno v:
2017 6th International Symposium on Next Generation Electronics (ISNE).
An innovative and improved UMOSFET device with low specific on-resistance maintain desired breakdown voltage up to 100V. In this proposed device, p-pillar under the p+ region UMOS structure has been developed and successfully simulated by using 2D si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1e34a1e50aa8660565ebd33c2a636dd
https://doi.org/10.1109/isne.2017.7968727
https://doi.org/10.1109/isne.2017.7968727
Publikováno v:
2017 6th International Symposium on Next Generation Electronics (ISNE).
Simulation tools are very important to develop process and design a new device structures. Device characteristics and physics phenomena also can be analyzed and predicted using this tools. High energy implantation of dopant atoms is used to form buri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0761adcac93e486e9cff9a1b4367b678
https://doi.org/10.1109/isne.2017.7968720
https://doi.org/10.1109/isne.2017.7968720