Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Suman Jaiswal"'
Autor:
Nurul Azam, Matthew G. Boebinger, Suman Jaiswal, Raymond R. Unocic, Parvin Fathi-Hafshejani, Masoud Mahjouri-Samani
Publikováno v:
ACS Applied Nano Materials. 5:9129-9139
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a7371daa14f2c7c415b560dc0e0cce
https://doi.org/10.1021/acsanm.2c01458
https://doi.org/10.1021/acsanm.2c01458
Autor:
Parvin Fathi-Hafshejani, Nurul Azam, Suman Jaiswal, Lu Wang, Marcelo Kuroda, Michael C. Hamilton, Sahar Hasim, Masoud Mahjouri-Samani
Publikováno v:
Frontiers in Biological Detection: From Nanosensors to Systems XV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::124a7b6cdc4d42e22e5751dba420d801
https://doi.org/10.1117/12.2650741
https://doi.org/10.1117/12.2650741
Publikováno v:
Medical Engineering & Physics. 115:103973
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddea9d3d2cd6b9f403080c0d868b4476
https://doi.org/10.1016/j.medengphy.2023.103973
https://doi.org/10.1016/j.medengphy.2023.103973
Publikováno v:
Mechanics Research Communications. 129:104098
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::015d3ac0f1206c5852b9b6739f49f5e1
https://doi.org/10.1016/j.mechrescom.2023.104098
https://doi.org/10.1016/j.mechrescom.2023.104098
Publikováno v:
2D Photonic Materials and Devices V.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a22782b349f670f0c9611d609e5226aa
https://doi.org/10.1117/12.2609921
https://doi.org/10.1117/12.2609921
Publikováno v:
Journal of Statistics Applications & Probability Letters. 3:71-81
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac46900502c64a720ddcba7dab1de25
https://doi.org/10.18576/jsapl/030202
https://doi.org/10.18576/jsapl/030202
Publikováno v:
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC).
This paper investigates the failure mechanism of Ultra High Voltage JFET (UHV-JFET) under Unclamped Inductive Switching (UIS) test. We explain the ruggedness failure of the Power MOSFETs based on drain impact ionization event, diffusion current flowi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffe0721c05f7b18d3c22f3e5a4c85b9
https://doi.org/10.1109/edssc.2017.8126546
https://doi.org/10.1109/edssc.2017.8126546
Autor:
Suman Jaiswal, S. Krishna Sai, Chirag Aryadeep, Muntha Sai Dheeraj, Gene Sheu, Chen Po-An, Shaik Mastanbasheer, Sivaji Selvendran, Syed Neyaz Imam
Publikováno v:
2017 6th International Symposium on Next Generation Electronics (ISNE).
An innovative and improved UMOSFET device with low specific on-resistance maintain desired breakdown voltage up to 100V. In this proposed device, p-pillar under the p+ region UMOS structure has been developed and successfully simulated by using 2D si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1e34a1e50aa8660565ebd33c2a636dd
https://doi.org/10.1109/isne.2017.7968727
https://doi.org/10.1109/isne.2017.7968727
Publikováno v:
2017 6th International Symposium on Next Generation Electronics (ISNE).
Simulation tools are very important to develop process and design a new device structures. Device characteristics and physics phenomena also can be analyzed and predicted using this tools. High energy implantation of dopant atoms is used to form buri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0761adcac93e486e9cff9a1b4367b678
https://doi.org/10.1109/isne.2017.7968720
https://doi.org/10.1109/isne.2017.7968720
Autor:
Chirag Aryadeep, S. Krishna Sai, Suman Jaiswal, Chen Po-An, Muntha Sai Dheeraj, Shaik Mastanbasheer, Sivaji Selvendran, Gene Sheu
Publikováno v:
2017 6th International Symposium on Next Generation Electronics (ISNE).
An innovative and improved UMOS device structure, with gate oxide 900 to 1500A, breakdown voltage 40 to 100V, robust to hot carrier injection (HCI) stress is proposed. We demonstrate and report the effect of p-type and n-type doping in gate oxide and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66f1bd14a7d8889b1462cb83e60a932b
https://doi.org/10.1109/isne.2017.7968721
https://doi.org/10.1109/isne.2017.7968721