Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sum-Min Wang"'
Autor:
Chenhsin Lien, Yu-Sheng Chen, Ming-Jinn Tsai, Wen-Hsing Liu, Frederick T. Chen, Wei-Su Chen, Heng-Yuan Lee, Chen-Han Tsai, Pang-Shiu Chen, Sum-Min Wang, Yen-Ya Hsu, Pei-Yi Gu
Publikováno v:
IEEE Electron Device Letters. 32:1585-1587
The effect of operation current on the high-resistance state and the endurance for the HfOx-based resistive device is comprehensively studied. Due to the current overshoot by the parasitic capacitances, an excess current leakage for the high resistan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56c50cdefb8f4970187d709c1e4eebf4
https://doi.org/10.1109/led.2011.2166051
https://doi.org/10.1109/led.2011.2166051
Autor:
Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Yi Wu, H.-S. Philip Wong, Pei-Yi Gu, Ming-Jinn Tsai, Sum-Min Wang, Shimeng Yu
Publikováno v:
2012 4th IEEE International Memory Workshop.
AlOx-based resistive switching device (RRAM) with multi-level storage capability was investigated for the potential to serve as an electronic synapse device. The Ti/AlOx/TiN memory stack with memory size 0.48um×0.48um was fabricated; the resistive l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3314a0c3ad28fc12fcd008318db6490a
https://doi.org/10.1109/imw.2012.6213663
https://doi.org/10.1109/imw.2012.6213663
Autor:
Sum-Min Wang, Wei-Su Chen, Chen-Han Tsai, Pang-Shiu Chen, Y. H. Wang, Shan-Yi Yang, Yi-Chan Chen, Frederick T. Chen, Yen-Ya Hsu, Pei-Yi Gu, H. Y. Lee, M.-J. Tsai, Wen-Hsing Liu
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
HfOx RRAM is a most promising candidate for next generation nonvolatile memory [1,2] with highest endurance, speed till now but bipolar switching affects the selection of steering device, performance and applications. Bipolar and unipolar RRAMs have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6788df9d98d1ac514b05f440d5e921f0
https://doi.org/10.1109/vtsa.2011.5872249
https://doi.org/10.1109/vtsa.2011.5872249
Autor:
Yu-Sheng Chen, Wen-Hsing Liu, Chenhsin Lien, Sum-Min Wang, Pei-Yi Gu, Heng-Yuan Lee, Wei-Su Chen, Chen-Han Tsai, Pang-Shiu Chen, Ming-Jinn Tsai, Frederick T. Chen, Yen-Ya Hsu
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
Recently, binary oxide based resistive memory exhibits a large sensing margin, low power, and high speed as a promising candidate for the next generation nonvolatile memory [1,2]. The compliance current (I C ) is required for the device under forming
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89cdcce3da731b3933ee61316ea8981d
https://doi.org/10.1109/vtsa.2011.5872252
https://doi.org/10.1109/vtsa.2011.5872252
Autor:
Che-He Lin, Chen-Hsin Lien, Keng-Li Su, Shyh-Shyuan Sheu, Pei-Yi Gu, Kuo-Hsing Cheng, Pei-Chia Chiang, Heng-Yuan Lee, Chia-Chen Kuo, Meng-Fan Chang, Ming-Jinn Tsai, Che-Wei Wu, Ku-Feng Lin, Yih-Shan Yang, Frederick T. Chen, Sum-Min Wang, Tzu-Kun Ku, Hsin-Tun Wu, Ming-Jer Kao, Wen-Pin Lin, Pi-Feng Chiu, Yu-Sheng Chen
Publikováno v:
ISSCC
Several emerging nonvolatile memories (NVMs) including phase-change RAM (PCRAM) [1–3], MRAM [4–5], and resistive RAM (RRAM) [6–8] have achieved faster operating speeds than embedded Flash. Among those emerging NVMs, RRAM has advantages in faste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceab8f31a3c0195e9eec1b5702d6eca1
https://doi.org/10.1109/isscc.2011.5746281
https://doi.org/10.1109/isscc.2011.5746281
Autor:
Shyh-Shyuan Sheu, Meng-Fan Chang, Ku-Feng Lin, Che-Wei Wu, Yu-Sheng Chen, Pi-Feng Chiu, Chia-Chen Kuo, Yih-Shan Yang, Pei-Chia Chiang, Wen-Pin Lin, Che-He Lin, Heng-Yuan Lee, Pei-Yi Gu, Sum-Min Wang, Chen, F.T., Keng-Li Su, Chen-Hsin Lien, Kuo-Hsing Cheng, Hsin-Tun Wu, Tzu-Kun Ku
Publikováno v:
2011 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2011, p200-202, 3p