Zobrazeno 1 - 10
of 232
pro vyhledávání: '"Sullivan, Gerard"'
Publikováno v:
Phys. Rev. B 101, 155302 (2020)
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to weak localiz
Externí odkaz:
http://arxiv.org/abs/1911.11895
Publikováno v:
Phys. Rev. B 100, 041404(R) (2019)
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant highlight of the effect i.e., the conductance quantization due to non-tri
Externí odkaz:
http://arxiv.org/abs/1910.10517
Publikováno v:
Phys. Rev. Lett. 123, 126803 (2019)
We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated by the antiphase oscillations of the conductance and the resistance. Ch
Externí odkaz:
http://arxiv.org/abs/1905.03971
Publikováno v:
Phys. Rev. B,99,085307(2019)
We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle barrier s
Externí odkaz:
http://arxiv.org/abs/1903.03939
Publikováno v:
Phys. Rev. B 98, 241301 (2018)
We measure microwave photocurrent in devices made from InAs/GaInSb bilayers where both insulating bulk state and conducting edge state were observed in the inverted-band regime, consistent with the theoretical prediction for a quantum spin Hall (QSH)
Externí odkaz:
http://arxiv.org/abs/1806.03419
Publikováno v:
Phys. Rev. B 96, 241406 (2017)
We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devic
Externí odkaz:
http://arxiv.org/abs/1707.09024
Autor:
Du, Lingjie, Li, Tingxin, Lou, Wenkai, Wu, Xingjun, Liu, Xiaoxue, Han, Zhongdong, Zhang, Chi, Sullivan, Gerard, Ikhlassi, Amal, Chang, Kai, Du, Rui-Rui
Publikováno v:
Phys. Rev. Lett. 119, 056803 (2017)
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge
Externí odkaz:
http://arxiv.org/abs/1608.06588
Publikováno v:
Appl. Phys. Lett. 108, 012101 (2016)
We perform tilt-field transport experiment on inverted InAs/GaSb which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densitie
Externí odkaz:
http://arxiv.org/abs/1601.00492
Publikováno v:
Nature Communications 8, 1971 (2017). Revised and published with the author list: Lingjie Du, Xinwei Li, Wenkai Lou, Gerard Sullivan, Kai Chang, Junichiro Kono and Rui-Rui Du
It was proposed that a dilute semimetal is unstable against the formation of an exciton insulator, however experimental confirmations have remained elusive. We investigate the origin of bulk energy gap in inverted InAs/GaSb quantum wells (QWs) which
Externí odkaz:
http://arxiv.org/abs/1508.04509
Autor:
Li, Tingxin, Wang, Pengjie, Fu, Hailong, Du, Lingjie, Schreiber, Kate A., Mu, Xiaoyang, Liu, Xiaoxue, Sullivan, Gerard, Csáthy, Gábor A., Lin, Xi, Du, Rui-Rui
Publikováno v:
Phys. Rev. Lett. 115 136804 (2015)
We report on the observation of a helical Luttinger-liquid in the edge of InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temperature and low bias voltage. Moreover, the conductance shows power-law
Externí odkaz:
http://arxiv.org/abs/1507.08362