Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sul-Hwan Lee"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:2275-2280
The effects of a metal–interlayer–semiconductor (MIS) source/drain (S/D) contact structure on a dynamic random access memory (DRAM) cell transistor are investigated using 3-D technology computer-aided design simulation. When the MIS S/D contact s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebfa329063c1953aa6281d5c0004cfb6
https://doi.org/10.1109/ted.2021.3066140
https://doi.org/10.1109/ted.2021.3066140
Publikováno v:
IEEE Electron Device Letters. 41:804-807
The turn-around effect of drain linear current (Idlin) with stress time in a pMOSFET in the off-state stress is investigated. The degradation rate of Idlin increases to a maximum of 6.1% at 20 s of the stress time and then continuously decreases to 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b56943f3d3ad6e0efc34b50fb1582bd4
https://doi.org/10.1109/led.2020.2989324
https://doi.org/10.1109/led.2020.2989324
Autor:
Kyoung Hwan Yeo, N. Cho, Sang-Hun Song, Byoung Hak Hong, Jae-Sung Rieh, Luryi Choi, Dong-sik Park, Sungwoo Hwang, Young Chai Jung, Dong-Won Kim, Sul-Hwan Lee, Yun Seop Yu, Kyung Seok Oh, Gyo Young Jin, Keun Hwi Cho
Publikováno v:
IEEE Electron Device Letters. 32:1179-1181
We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8867faec02af213d2f48c68b8425089f
https://doi.org/10.1109/led.2011.2159473
https://doi.org/10.1109/led.2011.2159473