Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Sukwinder Singh"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:2556-2562
Autor:
Sukwinder Singh, Jagannath Malik
Publikováno v:
International Journal of Circuit Theory and Applications. 49:762-777
Autor:
Parul Rattanpal, Sukwinder Singh
Publikováno v:
2022 10th International Conference on Emerging Trends in Engineering and Technology - Signal and Information Processing (ICETET-SIP-22).
Autor:
Ravinder Kumar, Sukwinder Singh
Publikováno v:
2022 10th International Conference on Emerging Trends in Engineering and Technology - Signal and Information Processing (ICETET-SIP-22).
Autor:
Kumar Saurabh, Sukwinder Singh
Publikováno v:
2022 10th International Conference on Emerging Trends in Engineering and Technology - Signal and Information Processing (ICETET-SIP-22).
Autor:
Deepak Subramanian, Ying Li, Akshata A. Korgaonkar, Vijayalakshmi Santhakumar, Sukwinder Singh, Alexandra Pallottie, Jenieve Guevarra, Dipika Sekhar, Kruthi Kella, Stella Elkabes, Bogumila Swietek
Publikováno v:
Annals of Neurology. 87:497-515
Objective Traumatic brain injury is a major risk factor for acquired epilepsies, and understanding the mechanisms underlying the early pathophysiology could yield viable therapeutic targets. Growing evidence indicates a role for inflammatory signalin
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811685491
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::583198efb8803b14c824bfe2be4dd85b
https://doi.org/10.1007/978-981-16-8550-7_5
https://doi.org/10.1007/978-981-16-8550-7_5
Autor:
Akash Gaikwad, Sukwinder Singh
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811627606
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01f6e36c8eb55eafd3feee0dd0bb932f
https://doi.org/10.1007/978-981-16-2761-3_11
https://doi.org/10.1007/978-981-16-2761-3_11
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811627606
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d69b5c4b402c43ec40814cf8e4f90d92
https://doi.org/10.1007/978-981-16-2761-3_10
https://doi.org/10.1007/978-981-16-2761-3_10
Publikováno v:
ICCCNT
This paper presents a design of a single stage 5W X-Band GaN HEMT Power Amplifier using a die Cree model CGHV1J006D. The amplifier is optimized for the frequency range of 11.5GHz to 11.9GHz. Load pull analysis is performed on the active device to ide