Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Suku Kim"'
Publikováno v:
IEEE Sensors Journal. 5:677-680
The characteristics of Pt/GaN Schottky diodes and Sc/sub 2/O/sub 3//AlGaN/GaN metal-oxide semiconductor (MOS) diodes as hydrogen and ethylene gas sensors and of gateless AlGaN/GaN high-electron mobility transistors (HEMTs) as polar liquid sensors are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a60c4347e368f87db5946937a3f40a8
https://doi.org/10.1109/jsen.2005.848136
https://doi.org/10.1109/jsen.2005.848136
Autor:
B. S. Kang, Suku Kim, S N G Chu, Stephen J. Pearton, C. R. Abernathy, Fan Ren, Brent P. Gila, Jenshan Lin
Publikováno v:
Journal of Physics: Condensed Matter. 16:R961-R994
There is renewed emphasis on development of robust solid-state sensors capable of uncooled operation in harsh environments. The sensors should be capable of detecting chemical, gas, biological or radiation releases as well as sending signals to centr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc05fddfb047c0b23b41b23bd363b063
https://doi.org/10.1088/0953-8984/16/29/r02
https://doi.org/10.1088/0953-8984/16/29/r02
Publikováno v:
Scopus-Elsevier
Through-wafer vias were formed in 400-µm-thick bulk 4H-SiC substrates by CO2 laser drilling (1.06-µm λ) with a o-switched pulse width of ∼30 nsec and a pulse frequency of 8 Hz. The resultant pulse energy delivered to the SiC surface was on the o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aac511b4bf2275abb5d6270070f5ca1e
https://doi.org/10.1007/s11664-004-0206-7
https://doi.org/10.1007/s11664-004-0206-7
Autor:
R. Mehandru, Stephen J. Pearton, Soon-oh Park, James Robert Lothian, Yong Jo Park, Fan Ren, Suku Kim, Jihyun Kim
Publikováno v:
Solid-State Electronics. 47:1037-1043
A finite element simulation was used to quantitatively estimate the effectiveness of flip-chip bonding in the temperature rise of bulk GaN Schottky rectifiers under various conditions of current density, duty cycle, forward turn-on voltage and on-sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e9a89732db7e88f812542ada638cb65
https://doi.org/10.1016/s0038-1101(02)00481-1
https://doi.org/10.1016/s0038-1101(02)00481-1
Autor:
W. Chang, G. T. Dang, W. S. Hobson, Hongen Shen, Fan Ren, Stephen J. Pearton, R. Mehandru, John Lopata, Suku Kim
Publikováno v:
Solid-State Electronics. 46:699-704
The finite difference method was used to analyze the thermal characteristics of continuous wave 850 nm AlGaAs/GaAs implant-apertured vertical-cavity surface-emitting lasers (VCSELs). A novel flip-chip design was used to enhance the heat dissipation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b181adac7a415f2194064fce2c4f5a
https://doi.org/10.1016/s0038-1101(01)00329-x
https://doi.org/10.1016/s0038-1101(01)00329-x
Autor:
Kelly P. Ip, B. S. Kang, David P. Norton, Stephen J. Pearton, Young-Woo Heo, Fan Ren, Suku Kim
Publikováno v:
Applied Physics Letters. 84:1698-1700
Pt/ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5 V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H2 is introduced into a N2 ambient at 25 °C. The rectifying current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d530262803a7cb815b753f09414fd8
https://doi.org/10.1063/1.1664012
https://doi.org/10.1063/1.1664012
Autor:
Toshikazu Nishida, Fan Ren, S. N. G. Chu, K.H. Baik, V. Chandrasekaran, Stephen J. Pearton, Jihyun Kim, Brent P. Gila, Mark Sheplak, J.-I. Chyi, C. R. Abernathy, B. S. Kang, Chang Chi Pan, G.-T. Chen, Suku Kim
Publikováno v:
Applied Physics Letters. 83:4845-4847
The changes in the conductance of the channel of Al0.3Ga0.7N/GaN high-electron-mobility transistor structures during the application of both tensile and compressive strain were measured. For a fixed Al mole fraction, the changes in the conductance we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f83865a5d707c2e5edbb0651796080b6
https://doi.org/10.1063/1.1631054
https://doi.org/10.1063/1.1631054
Autor:
Fan Ren, William S. Hobson, R. Mehandru, W. Chang, Stephen J. Pearton, Gerard Dang, John Lopata, Hongen Shen, Kelly P. Ip, Suku Kim
Publikováno v:
SPIE Proceedings.
Finite difference analysis was used to determine the thermal characteristics of continuous wave (CW) 850 nm AlGaAs/GaAs implant-apertured vertical-cavity surface-emitting lasers. A novel flip-chip design was used to enhance the heat dissipation. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3cd968b2d1249a75205d7ce5ca48c4f
https://doi.org/10.1117/12.480855
https://doi.org/10.1117/12.480855
Autor:
Brent P. Gila, Young-Woo Heo, Fan Ren, B. S. Kang, C. R. Abernathy, Kelly P. Ip, Suku Kim, David P. Norton, Stephen J. Pearton
Publikováno v:
Journal of The Electrochemical Society. 151:G468
The characteristics of SC 2 O 3 /AIGaN/GaN metal-oxide semiconductor (MOS) diodes and Pt/ZnO Schottky diodes as detectors of C 2 H 4 are reported. At 25°C, a change in forward current of ∼40 μA at a bias of 2.5 V was obtained in response to a cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c1d5cc655dffa69ef0ca4466ae61d22
https://doi.org/10.1149/1.1758817
https://doi.org/10.1149/1.1758817
Autor:
Jihyun Kim, Fan Ren, B. S. Kang, Suku Kim, G. Y. Chung, K.H. Baik, Stephen J. Pearton, Y. Irokawa
Publikováno v:
Electrochemical and Solid-State Letters. 7:G125
An array (305 devices) of 500 X 500 μm 4H-SiC Schottky rectifiers was interconnected using electroplated Au and clamped in a Cu pressure contact flat package. A peak total forward current of 430 A at 5.7V was achieved, with an on-state resistance (R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02ecd9e763f971d4a91e967e8417c2c7
https://doi.org/10.1149/1.1697908
https://doi.org/10.1149/1.1697908