Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Sukkoo Jung"'
Autor:
Byung Oh Jung, Wonyong Lee, Jeomoh Kim, Myungshin Choi, Hui-Youn Shin, Minho Joo, Sukkoo Jung, Yoon-Ho Choi, Moon J. Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract To investigate the effects of their surface recovery and optical properties, extremely small sized (12 µm × 12 µm mesa area) red AlGaInP micro light emitting diodes ( $$\upmu$$ μ LED) were fabricated using a diluted hydrofluoric acid (HF
Externí odkaz:
https://doaj.org/article/75d5d924aaae457a83929855210b1ed7
Autor:
Won-Yong Lee, Hui-Youn Shin, Minho Joo, Jeomoh Kim, Yoonho Choi, Moon J. Kim, Myungshin Choi, Byung Oh Jung, Sukkoo Jung
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Scientific Reports
Scientific Reports
To investigate the effects of their surface recovery and optical properties, extremely small sized (12 µm × 12 µm mesa area) red AlGaInP micro light emitting diodes ($$\upmu$$ μ LED) were fabricated using a diluted hydrofluoric acid (HF) surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b56e5963212981305dbb3b210d726ce3
https://doaj.org/article/75d5d924aaae457a83929855210b1ed7
https://doaj.org/article/75d5d924aaae457a83929855210b1ed7
Publikováno v:
Current Applied Physics. 17:842-846
We studied the In incorporation efficiency and composition distribution in a nonpolar a -plane InGaN ( a -InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81018dc95d6b724db2f7c67416821188
https://doi.org/10.1016/j.cap.2017.03.016
https://doi.org/10.1016/j.cap.2017.03.016
Autor:
Yun Ju Choi, Joon Seop Kwak, Hangun Kim, K. H. Bang, Hyunggu Kim, Min Joo Park, S. J. Hwang, Y. Chang, Sukkoo Jung
Publikováno v:
Journal of Display Technology. 9:346-352
A significant improvement of output power and external quantum efficiency (EQE) for nonpolar a-plane (11-20) GaN light-emitting diodes (LEDs) on r-plane sapphire substrates has been demonstrated by using embedded pyramid-shape air-gap arrays on hexag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::443250368874babb0db08e5481a80fdc
https://doi.org/10.1109/jdt.2012.2225597
https://doi.org/10.1109/jdt.2012.2225597
Autor:
Yoonho Choi, Chunfeng Zhang, Xiaoyong Wang, Joon Seop Kwak, Fan Yang, Min Xiao, Chentian Shi, Sukkoo Jung, Min Joo Park
Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66911fd0540c13ea8ce28f6b356f430f
http://arxiv.org/abs/1310.2004
http://arxiv.org/abs/1310.2004
Autor:
Xiaoyong Wang, X. S. Wu, Fan Yang, Joon Seop Kwak, Min Xiao, Sukkoo Jung, Chentian Shi, Yoonho Choi, Min Joo Park, Chunfeng Zhang
We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of defect-related em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82835a021e2fe7c567b41499ad6d8e70
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:04J111
Vertical nonpolar a-plane (11-20) InGaN/GaN light-emitting diodes (LEDs) have been demonstrated by using laser lift-off technique. The forward voltage of the a-plane vertical LEDs was 4.3 V at 350 mA, which was reduced by 0.8 V compared to that of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b1552cb9a8a78b3216c73d8c45885b3
https://doi.org/10.1116/1.4958720
https://doi.org/10.1116/1.4958720
Temperature Dependent Thermal Properties of a GaN-based Laser Diode Analyzed by an Electrical Method
Autor:
Jongseok Kim, Hyoyeong Park, Seungtaek Kim, Hoon Jeong, Kyeongkyun Lee, Jeong Hoon Yi, Yoonho Choi, Sukkoo Jung, Minsoo Noh, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
AIP Conference Proceedings.
We report thermal properties of a high power GaN‐based laser diode depending on the ambient temperature, which are analyzed using forward voltage changes due to heat generation during a current injection. The increasing rate of junction temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d993f6785dce5185e373b45912952b7d
https://doi.org/10.1063/1.3666275
https://doi.org/10.1063/1.3666275
Autor:
Jaehyoung Park, Chung Yi Kim, Jina Jeon, Jung-Soo Lee, Ki-Chang Jung, Hui-Youn Shin, Hyojung Bae, Sukkoo Jung, Jun-Seok Ha, Yoonho Choi, Hyunggu Kim, Inwoo Lee
Publikováno v:
Japanese Journal of Applied Physics. 53:090307
We report on the origin of the non-ohmic behavior of Ni/Au-based p-type contacts on a nonpolar a-plane GaN layer. The contact properties of Ga-polar c-plane GaN and nonpolar a-plane GaN are compared. While the Ga-polar c-plane shows ohmic-contact pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935724631d9d5ccf68ff41ddf4dfd53e
https://doi.org/10.7567/jjap.53.090307
https://doi.org/10.7567/jjap.53.090307
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jul/Aug2016, Vol. 34 Issue 4, p1-5, 5p