Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method

Autor: Vakiv N. M., Krukovskii S. I., Sukach A. V., Tetyorkin V. V., Mrykhin I. A., Mikhashchuk Yu. S., Krukovskii R. S.

Publikováno v: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 27-30 (2012)

The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing a

Externí odkaz: https://doaj.org/article/5f481beab823400686992112cc0ff7fe

Shunt current in InAs diffused photodiodes.

Autor: Sukach, A. V.¹, Tetyorkin, V. V.¹ teterkin@isp.kiev.ua, Tkachuk, A. I.²

Publikováno v: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2020, Vol. 23 Issue 2, p208-213. 6p.

1/ƒ noise and carrier transport mechanisms in InSb p⁺-n junctions.

Autor: Tetyorkin, V. V.¹ teterkin@isp.kiev.ua, Sukach, A. V.¹, Tkachuk, A. I.², Trotsenko, S. P.¹

Publikováno v: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2018, Vol. 21 Issue 4, p374-379. 6p.

Effect of thermal annealing on electrical and photoelectrical properties of n-InSb.

Autor: Stariy, S. V.¹, Sukach, A. V.¹, Tetyorkin, V. V.¹ teterkin@isp.kiev.ua, Yukhymchuk, V. O.¹, Stara, T. R.¹

Publikováno v: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2017, Vol. 20 Issue 1, p105-109. 5p.

Програма для моделювання хмарного покриву над сонячною електростанцією

Autor: Sukach, Roman V., Klen, Kateryna Serhiivna, Zhuikov, Valerii Yakovych

Publikováno v: Microsystems, Electronics and Acoustics; Том 24, № 4 (2019); 18-24
Микросистемы, Электроника и Акустика; Том 24, № 4 (2019); 18-24
Мікросистеми, Електроніка та Акустика; Том 24, № 4 (2019); 18-24

In this article is represented the results of modeling the work of a solar power station under mixed sky conditions (cloud passes over its plane) in software written in Python programming language. As the issue of cost-effectiveness is a decisive one

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=scientific_p::4dfe25b373f015abe981a72bfb765e77
http://elc.kpi.ua/article/view/169709