Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Suk-Soo Pyo"'
Autor:
Manuj Rathor, Suk-Soo Pyo, Steve Ngueya Wandji, Andrew Sowden, Jean Christophe Vial, Alexandra Gourio, Gwan-Hyeob Koh, El Mehdi Boujamaa, Jongwook Kye, Samsudeen Mohamed Ali, Yoon-Jong Song, Cyrille Dray, Taejoong Song
Publikováno v:
VLSI Circuits
In this paper we present a read circuitry that tackles all STT-MRAM read challenges. First, a negative temperature coefficient (NTC) reference based on an MTJ in series with an “NTC” resistor circuit emulator is described. Then, an offset cancell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a9e75e497fd088271bdab9049ae51aa
https://doi.org/10.1109/vlsicircuits18222.2020.9162803
https://doi.org/10.1109/vlsicircuits18222.2020.9162803
Publikováno v:
ISCAS
In this paper, we have presented 28-nm embedded 8Mb 64 I/O Spin-Transfer-Torque Magnetic RAM (STT-MRAM) Macro. Besides being the one of the world's first mass product solution for embedded Flash (eFlash) replacement for Internet-of-Things (IoT) chips
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea5327915be7efcefe3aa05b09438781
https://doi.org/10.1109/iscas.2018.8351201
https://doi.org/10.1109/iscas.2018.8351201
Publikováno v:
ISCAS
In this paper, we present a designed single Magnetic Tunnel Junction (MTJ) cell and a single switching transistor (1T-1MTJ) bitcell based 8Mb 64 I/O Spin-Transfer-Torque Magnetic RAM (STT-MRAM). Novel 3-Section Symmetric Reference Structure and high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::537908952f37fe963cf9eedc2aff1084
https://doi.org/10.1109/iscas.2017.8050918
https://doi.org/10.1109/iscas.2017.8050918
Autor:
Jung-han Kim, Jun-Sung Kim, Suk-Soo Pyo, Young-Keun Lee, Taejoong Song, Gyu-Hong Kim, Kee-Sup Kim, Cheol-Ha Lee, Hyun-Taek Jung
Publikováno v:
CICC
In this paper, an embedded SDRAM (eSDRAM) with smart boosting and power management (SB-PM) scheme for low power operation has been designed. SB-PM scheme decreases 40.3% of dynamic power and 69.1% of standby power consumption with ECC compared with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e22eb0a9c08212505ecf4751051a5d8
https://doi.org/10.1109/cicc.2012.6330622
https://doi.org/10.1109/cicc.2012.6330622
Publikováno v:
ISCAS
In this paper, a low-power embedded pseudo-SRAM adopting novel auto-adjusted self-refresh control scheme has been designed. The proposed self-refresh control scheme automatically extends the self-refresh period by monitoring the number of failed cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc44c0280ec77934e1e841ffa58dc30d
https://doi.org/10.1109/iscas.2009.5118313
https://doi.org/10.1109/iscas.2009.5118313
Publikováno v:
2009 IEEE International Symposium on Circuits & Systems; 2009, p2517-2520, 4p