Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Suk-Kyu Ryu"'
Autor:
Suk-Kyu Ryu, Do-Chul Yang
Publikováno v:
Journal of the Korean Society for Aeronautical & Space Sciences. 42:279-283
In the present paper, the physical and chemical resistance to Fluorine of ceramic coating materials ( and ZrO-) were studied. and ZrO- specimens coated by thermal plasma spray were tested inside Fluoro-carbon plasma chamber, and their resistance perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f9399e415f48412aa30a5027697387d
https://doi.org/10.5139/jksas.2014.42.4.279
https://doi.org/10.5139/jksas.2014.42.4.279
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:318-326
An analytical approach to predict initiation and growth of interfacial delamination in the through-silicon via structure is developed by combining a cohesive zone model with a shear-lag model. Two critical temperatures are predicted for damage initia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d9856ab9d597e5d4e51ac2a74a7baaf
https://doi.org/10.1109/tdmr.2013.2261300
https://doi.org/10.1109/tdmr.2013.2261300
Publikováno v:
Journal of Mechanical Science and Technology. 28:255-261
During air-gap formation in interconnects, decomposition process of the sacrificial layer induces deformation of a low-k dielectric cap layer. For analysis of ensuing structural instability, a logistic kinetics model is introduced to describe the rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19df47698dac11483f22384d071e7e6c
https://doi.org/10.1007/s12206-013-0981-2
https://doi.org/10.1007/s12206-013-0981-2
Publikováno v:
Microelectronics Reliability. 53:53-62
Three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective approach to overcome the wiring limit beyond the 32 nm technology node. Due to the mismatch of thermal expansion between the via material and Si, thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd43d108f5cf4e60d8bf94a78c922972
https://doi.org/10.1016/j.microrel.2012.05.008
https://doi.org/10.1016/j.microrel.2012.05.008
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 12:255-262
Three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an effective solution to overcome the wiring limit imposed on device density and performance. However, thermal stresses induced in the TSV structures can affect the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f2774c157f7638f32e77aea7542881b
https://doi.org/10.1109/tdmr.2012.2194784
https://doi.org/10.1109/tdmr.2012.2194784
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 11:35-43
Continual scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, 3-D integration with through-silicon vias (TSVs) has emerged as an effective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bfd0fc671a4fa1e58603447ef8d2fa4
https://doi.org/10.1109/tdmr.2010.2068572
https://doi.org/10.1109/tdmr.2010.2068572
Autor:
Hyeoncheol Kim, Suk-kyu Ryu, Jungyul Park, Junghun Cha, Kukjin Chun, Sewan Park, Sukho Park, Jinseok Kim, Yongwon Jeong
Publikováno v:
Journal of Micromechanics and Microengineering. 16:1778-1782
This paper presents a novel highly efficient passive micromixer that employs diffusion for micromixing. Since conventional fabrication methods cannot form precise aligned microchannels, the realization of a complex 3D micromixer has been difficult. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae22687c90209b6077e633914a3a340
https://doi.org/10.1088/0960-1317/16/9/004
https://doi.org/10.1088/0960-1317/16/9/004
Publikováno v:
AIP Conference Proceedings.
Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::483cc76dd84fc0f94c6b0d94c324f765
https://doi.org/10.1063/1.4881340
https://doi.org/10.1063/1.4881340
Publikováno v:
AIP Conference Proceedings.
Continual scaling of devices and on-chip wiring has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, three-dimensional (3-D) integration with through-silicon vias (TSVs) has em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddc44601a25c606dd37545e10bd29dd0
https://doi.org/10.1063/1.4881348
https://doi.org/10.1063/1.4881348