Zobrazeno 1 - 10
of 176
pro vyhledávání: '"Suk-Hee Han"'
Autor:
Wan-Soo Lee, Suk-Hee Han
Publikováno v:
Korean-Chinese Social Science Studies. 21:294-323
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1596d659619dea284b01318c14b19f27
https://doi.org/10.36527/kcsss.21.1.13
https://doi.org/10.36527/kcsss.21.1.13
Autor:
Tae-Eon Park, Youn Ho Park, Jong-Min Lee, Sung Wook Kim, Hee Gyum Park, Byoung-Chul Min, Hyung-jun Kim, Hyun Cheol Koo, Heon-Jin Choi, Suk Hee Han, Mark Johnson, Joonyeon Chang
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
Semiconductors are promising for high performance spintronics but the low functioning temperature hampers their applications. Here the authors achieve a strong room temperature modulation of spin-dependent resistance in GaN nanowires, which marks an
Externí odkaz:
https://doaj.org/article/a7f75cd3087e46968d1e7403a4d72c99
Publikováno v:
Global Economic Review. 50:254-272
China's emergence in international standardisation has led scholars to debates over its intensifying techno-nationalism. This paper examines ginseng standardization using interviews and archives. S...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43d4a032705fab6b53adf59a9a3005bc
https://doi.org/10.1080/1226508x.2021.1884115
https://doi.org/10.1080/1226508x.2021.1884115
Autor:
Joonyeon Chang, Hyung-jun Kim, Suk Hee Han, Hee Gyum Park, Byoung-Chul Min, Hyun Cheol Koo, Hansung Kim
Publikováno v:
Current Applied Physics. 20:1295-1298
A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::061e53ec3d9236fecb89af129bbdcf42
https://doi.org/10.1016/j.cap.2020.08.009
https://doi.org/10.1016/j.cap.2020.08.009
Autor:
Jung-Hoon Lee, Suk Hee Han
Publikováno v:
Journal of international area studies. 24:79-101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c3bb1bb498d1148bbc807952ffbb701
https://doi.org/10.18327/jias.2020.7.24.3.79
https://doi.org/10.18327/jias.2020.7.24.3.79
Autor:
Woo-Jun Min, Suk Hee Han
Publikováno v:
International Area Studies Review. 23:177-193
At the beginning of 2018, North Korea halted its long-range nuclear- and ballistic-missile development programs and announced that it was willing to denuclearize. Soon afterwards, it reached out to countries including the US, China and South Korea. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ef72235357decbacb0f35225fec99b
https://doi.org/10.1177/2233865920901896
https://doi.org/10.1177/2233865920901896
Publikováno v:
Frontiers in Physics, Vol 3 (2015)
In a two dimensional electron system (2DES), coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted thi
Externí odkaz:
https://doaj.org/article/0feedb74e8cb4202b9f3f41c2aae82c5
Publikováno v:
Political Science. 71:40-60
This article addresses how two globally critical regions – Europe and East Asia (especially Northeast Asia) – are transforming their relationship as an international system defined by multi...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f78d3c7cc285a91c9dd35fcdc6209fc1
https://doi.org/10.1080/00323187.2019.1640070
https://doi.org/10.1080/00323187.2019.1640070
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:10210-10213
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1db1409befb75a2f741b38cc875276
https://doi.org/10.1166/jnn.2016.13129
https://doi.org/10.1166/jnn.2016.13129
Publikováno v:
Journal of Electronic Materials. 46:3894-3898
In a ballistic spin transport channel, spin Hall and Rashba effects are utilized to provide a gate-controlled spin Hall transistor. A ferromagnetic electrode and a spin Hall probe are employed for spin injection and detection, respectively, in a two-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dae5c977b1746e7701646c1aa220be9
https://doi.org/10.1007/s11664-016-4909-3
https://doi.org/10.1007/s11664-016-4909-3