Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Suk-Chon Kwon"'
Autor:
Kijun Lee, Kazushige Kanda, Junichi Miyamoto, Sung-Tae Ahn, Toshihiko Himeno, Y. Oshima, Hiroshi Nakamura, Tae-Sung Jung, Suk-Chon Kwon, Kang-Young Kim, Sung-Soo Lee, Kazuhiko Hashimoto, Jang-Rae Kim, Jin-Ki Kim, Kang-Deog Suh, Koji Sakui, Y. Itoh, Kazuhisa Kanazawa
Publikováno v:
IEEE Journal of Solid-State Circuits. 32:670-680
Emerging application areas of mass storage flash memories require low cost, high density flash memories with enhanced device performance. This paper describes a 64 Mb NAND flash memory having improved read and program performances. A 40 MB/s read thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3eb674852fc60b08f6448e9ed181e75
https://doi.org/10.1109/4.568831
https://doi.org/10.1109/4.568831
Autor:
Jang-Rae Kim, Young-Ho Lim, Young-joon Choi, Byung-Hoon Suh, Sung-Soo Lee, Jin-Sun Yum, Byung-Soon Choi, Kang-Deog Suh, Suk-Chon Kwon, Jung-Hyuk Choi, Yong-Nam Koh, Hyung-Kyu Lim, Jin-Ki Kim
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:1149-1156
While the performance of flash memory exceeds hard disk drives in almost every category, the cost of flash memory must come down in order to gain wider acceptance in mass storage applications. This paper describes a 3.3 V-only 32 Mb NAND flash memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::678aebdf91b47b629181c48f11c7ca5d
https://doi.org/10.1109/4.475701
https://doi.org/10.1109/4.475701
Autor:
null Jin-Ki Kim, null Koji Sakui, null Sung-Soo Lee, J. Itoh, null Suk-Chon Kwon, K. Kanazawa, null Ji-Jun Lee, H. Nakamura, null Kang-Young Kim, T. Himeno, null Jang-Rae Kim, K. Kanda, null Tae-Sung Jung, Y. Oshima, null Kang-Deog Suh, K. Hashimoto, null Sung-Tae Ahn, J. Miyamoto
Publikováno v:
1996 Symposium on VLSI Circuits. Digest of Technical Papers.
Rapidly increasing solid-state mass-storage application areas are requiring low cost, high density flash memories with higher read and program throughputs. This paper describes a 3.3 V-only 64 Mb NAND flash memory fabricated using a 0.4 /spl mu/m sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::232fc5d3df6e529da68ad1aa087591ce
https://doi.org/10.1109/vlsic.1996.507757
https://doi.org/10.1109/vlsic.1996.507757
Autor:
Jin-Ki Kim, Sakui, K., Sung-Soo Lee, Itoh, Y., Suk-Chon Kwon, Kanazawa, K., Ki-Jun Lee, Nakamura, H., Kang-Young Kim, Himeno, T., Jang-Rae Kim, Kanda, K., Tae-Sung Jung, Oshima, Y., Kang-Deog Suh, Hashimoto, K., Sung-Tae Ahn, Miyamoto, J.
Publikováno v:
IEEE Journal of Solid-State Circuits; 1997, Vol. 32 Issue 5, p670-680, 11p
Autor:
Kang-Deog Suh, Byung-Hoon Suh, Young-Ho Lim, Jin-Ki Kim, Young-Joon Choi, Yong-Nam Koh, Sung-Soo Lee, Suk-Chon Kwon, Byung-Soon Choi, Jin-Sun Yum, Jung-Hyuk Choi, Jang-Rae Kim, Hyung-Kyu Lim
Publikováno v:
IEEE Journal of Solid-State Circuits; 1995, Vol. 30 Issue 11, p1149-1156, 8p
Autor:
Jin-Ki Kim, Koji Sakui, Sung-Soo Lee, Itoh, J., Suk-Chon Kwon, Kanazawa, K., Ji-Jun Lee, Nakamura, H., Kang-Young Kim, Himeno, T., Jang-Rae Kim, Kanda, K., Tae-Sung Jung, Oshima, Y., Kang-Deog Suh, Hashimoto, K., Sung-Tae Ahn, Miyamoto, J.
Publikováno v:
1996 Symposium on VLSI Circuits Digest of Technical Papers; 1996, p168-169, 2p
Conference
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Conference
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