Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Suk Pil Kim"'
Publikováno v:
Journal of the Korea society of IT services. 13:341-357
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69d42f1a52488f5bd729fc76b946fa69
https://doi.org/10.9716/kits.2014.13.4.341
https://doi.org/10.9716/kits.2014.13.4.341
Publikováno v:
Ceramics International. 34:1003-1006
In order to optimize the metalorganic chemical vapor deposition process for PbZrxTi1−xO3 (PZT) thin films, the effect of purge gas species was investigated. Two steps of gas input process for stabilizing reaction chamber pressure, the gas flow prio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ed84920ad492fcc704534ad23f39a84
https://doi.org/10.1016/j.ceramint.2007.09.067
https://doi.org/10.1016/j.ceramint.2007.09.067
Autor:
Sagnmin Shin, N. W. Jang, Chel-Jong Choi, Jang Ho Lee, Suk-pil Kim, Si-Hyun Park, Youngsoo Park, June Key Lee, June-mo Koo, Young Su Chung
Publikováno v:
Integrated Ferroelectrics. 84:57-65
Surface smoothness and ferroelectric properties of PbZrxTi1-xO3 (PZT) thin films, grown by metal-organic chemical vapor deposition (MOCVD), was improved by applying Ir–Ru alloy electrode. It was found that the specific composition ratio of Ir and R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c752711f1484fd9972b87fa0ff0289cf
https://doi.org/10.1080/10584580601085214
https://doi.org/10.1080/10584580601085214
TRIAL FOR MAKING THREE DIMENSIONAL PZT CAPACITOR FOR HIGH DENSITY FERROELECTRIC RANDOM ACCESS MEMORY
Publikováno v:
Integrated Ferroelectrics. 81:219-226
Three dimensional capacitors of Pb(Zr,Ti)O3 [PZT] together with the Ru electrodes were tried to deposit by metal organic chemical vapor deposition for realizing high density ferroelectric random access memory (FeRAM). Good conformability was obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e1cb5652ff4010ea7fb948156f6da5e
https://doi.org/10.1080/10584580600660488
https://doi.org/10.1080/10584580600660488
Autor:
Ki-Hong Kim, Jang Ho Lee, Sang-Min Shin, June-mo Koo, Jung-hyun Lee, Bum-seok Seo, Kwanghee Lee, Suk-pil Kim, Youngsoo Park
Publikováno v:
Integrated Ferroelectrics. 81:15-26
For high-density FRAM application, we found novel electrodes of IrTi family having a sufficiently low resistance. In addition, IrTi show good adhesion and better surface roughness than Ir. From FWHM results, PZT crystallinity is improved by applying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d9b8eaa850f3ffad16361a6fd2816b
https://doi.org/10.1080/10584580600657864
https://doi.org/10.1080/10584580600657864
Autor:
Jong-Hun Kim, Suk-pil Kim, Jin Ho Baek, June-mo Koo, Z. G. Khim, Sang-Min Shin, Youngsoo Park
Publikováno v:
Japanese Journal of Applied Physics. 45:1981-1985
The physical and chemical properties of metallic electrodes on Pb(Zr,Ti)O3 (PZT) are investigated by atomic force microscopy. Pt, a catalyst, tends to change itself into a dielectric oxide. Such a passive layer should cause a depolarization field dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38fe155606b09b7059bc8c5b980362d8
https://doi.org/10.1143/jjap.45.1981
https://doi.org/10.1143/jjap.45.1981
Publikováno v:
Integrated Ferroelectrics. 70:115-122
In order to fabricate highly integrated ferroelectric random access memory (FeRAM), three-dimensional (3D) trench structure should be employed. A capacitor stack, two electrodes and ferroelectric layer, fills the shallow trench. Thus the thickness of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28c66ea2a65393b6829213f9b4f8cee3
https://doi.org/10.1080/10584580490895860
https://doi.org/10.1080/10584580490895860
Autor:
Youngjin Cho, Choong-rae Cho, Jung-hyun Lee, Sang-Min Shin, June-mo Koo, June-key Lee, Sungho Park, Youngsoo Park, Suk-pil Kim
Publikováno v:
Integrated Ferroelectrics. 70:141-150
In order to decrease the effect of an interface dead layer, we improved PZT thin film properties that have highly preferential (111) orientation [R(111) = 88%] and good electrical results [71 μC/cm2] with optimized N2 and O2 gas treatment prior to P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6421ddc6c565216c24baae60b6baef1
https://doi.org/10.1080/10584580490895608
https://doi.org/10.1080/10584580490895608
Autor:
Youngjin Cho, June Key Lee, June-mo Koo, Sang-Min Shin, Sungho Park, Jung-hyun Lee, Suk Pil Kim, Youngsoo Park, Choong Rae Cho
Publikováno v:
Integrated Ferroelectrics. 64:157-168
Pb(Zr,Ti)O3 (PZT) films grown on Ir electrodes by a metal-organic chemical vapor deposition (MOCVD) have suffered from high leakage and rough surface. We sputtered Pt and Ir simultaneously onto Ti/SiO2/Si substrates and formed Ir-Pt alloy bottom elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57d1116bd82b7cc125a43b7209857b71
https://doi.org/10.1080/10584580490894168
https://doi.org/10.1080/10584580490894168
Autor:
Youngsoo Park, June Key Lee, Jong-Gul Yoon, June-mo Koo, B. S. Kang, Tae W. Noh, Sungho Park, Jung-hyun Lee, Suk Pil Kim, Choong Rae Cho, Ji Young Jo, Dong Jik Kim, Youngjin Cho, Sang-Min Shin
Publikováno v:
Integrated Ferroelectrics. 64:169-181
We compared retention characteristics of Pb(Zr,Ti)O3 (PZT) capacitors with either noble metal electrodes or their oxide compounds. Very thin PZT films with thickness below 100 nm were deposited by metal-organic chemical vapor deposition (MOCVD) on Ir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bab02637e7064355f2e0739c2f31c71e
https://doi.org/10.1080/10584580490894177
https://doi.org/10.1080/10584580490894177