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Autor:
Suk Kwang Park, Jaekyun Moon
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:1183-1192
We characterize inter-cell interference in commercial three-dimensional NAND flash memory. By writing random data into 3D NAND and collecting sample means and sample variances of cell values corresponding to a particular set of input values in fixed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4975d9c32e720459fe06c5d0c3728af3
https://doi.org/10.1109/tcsi.2020.3047484
https://doi.org/10.1109/tcsi.2020.3047484
