Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Sujitra Pookpanratana"'
Publikováno v:
Materials Research Express, Vol 10, Iss 7, p 075902 (2023)
The Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs). The characteristics of the Schottky contact are contingent on the properties o
Externí odkaz:
https://doaj.org/article/91305143f8744e0eaa4abfed36a985be
Autor:
Andrew J. Winchester, Michael Mastro, Travis Anderson, Jennifer Hite, Andrei Kolmakov, Sujitra Pookpanratana
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Autor:
Ganga Raj Neupane, Andrew Winchester, Nicolas Marquez Peraca, David Albin, Joel Duenow, Matthew O. Reese, Sujitra Pookpanratana, Susanna Thon, Behrang H. Hamadani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f6e867dba6aeb98e55c224f79cc879
https://doi.org/10.2139/ssrn.4405262
https://doi.org/10.2139/ssrn.4405262
Publikováno v:
ECS Meeting Abstracts. :1253-1253
Photoemission (PES) has been an essential metrology in the field of materials physics for over 30 years. The electronic band structure of a solid is a fundamental property which defines how a material will be used and integrated into device form. Top
Autor:
Ory Maimon, Neil Moser, Kyle Liddy, Andrew Green, Kelson Chabak, Curt Richter, Kin Cheung, Sujitra Pookpanratana, Qiliang Li
Publikováno v:
ECS Meeting Abstracts. :2363-2363
Beta-gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor for high power electronic applications due to its high theoretical critical field of 8 MV/cm, and Baliga figure of merit (BFOM) of ~3300, 3 – 10 times larger than current
Autor:
Falk Niefind, Henry G Bell, Thuc Mai, Angela R Hight Walker, Randolph E Elmquist, Sujitra Pookpanratana
Publikováno v:
Microscopy and Microanalysis. 28:764-764
Autor:
Sujitra Pookpanratana, Falk Niefind
Publikováno v:
Microscopy and Microanalysis. 27:634-634
The chemical structure of the CdS/Cu2ZnSnSe4(CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a “redistribution” of elements in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::279622e674b5cffc9feb391919252590
https://zenodo.org/record/1035916
https://zenodo.org/record/1035916
Autor:
Sujitra Pookpanratana
Publikováno v:
ECS Meeting Abstracts. :1295-1295
The drive to produce smaller, faster, lower power electronic components for computing is pushing the semiconductor industry to nanometer-scale device structures. Atomically thin two-dimensional (2D) materials such as transitional metal dichalcogenide
Publikováno v:
ECS Meeting Abstracts. :1296-1296
The promise of flexible, stretchable, and transparent circuitry has driven intense research in carbon-based and two-dimensional (2D) material-based electronics, such as organic semiconductors, graphene and transition-metal dichalcogenides (TMDs). For