Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Sujay Chakravarty"'
Publikováno v:
Materials Research Express, Vol 7, Iss 1, p 016108 (2020)
We report a distinctly different zero feld cooled negative exchange bias(EB) effect in Ni doped LaFeO _3 nanoparticle where the EB field is both temperature and concentration dependent. Nanoparticles of Ni substituted LaFeO _3 is prepared by a sol-ge
Externí odkaz:
https://doaj.org/article/ebd4ac14a61048a49a5835ca9b1189bb
Autor:
Sunandan Pakrashi, Swayamprava Dalai, Ahmed Humayun, Sujay Chakravarty, Natarajan Chandrasekaran, Amitava Mukherjee
Publikováno v:
PLoS ONE, Vol 8, Iss 9, p e74003 (2013)
Growing nanomaterials based consumer applications have raised concerns about their potential release into the aquatic ecosystems and the consequent toxicological impacts. So environmental monitoring of the nanomaterials in aqueous systems becomes imp
Externí odkaz:
https://doaj.org/article/47316e641c6e4b3aa7d06e2c27ea83e0
Autor:
Thiruvenkadam, S., Prabhakaran, S., Sujay Chakravarty, Ganesan, V., Vasant Sathe, Santhosh Kumar, M.C., Leo Rajesh, A.
Publikováno v:
In Physica B: Physics of Condensed Matter 15 March 2018 533:22-27
Autor:
Debarati Pal, Abhineet Verma, Mohd Alam, Sambhab Dan, Amit Kumar, Seikh Mohammad Yusuf, Soma Banik, Sujay Chakravarty, Satyen Saha, Swapnil Patil, Sandip Chatterjee
Publikováno v:
The Journal of Physical Chemistry C. 127:2508-2517
Autor:
Preeti Verma, Subhajit Raut, Debasish Sarkar, Parasmani Rajput, Manvendra N. Singh, Sujay Chakravarty, Rajendra Sharma, Supratim Giri
Publikováno v:
The Journal of Physical Chemistry C. 126:19849-19857
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:22361-22373
Autor:
P. Singha, Subarna Das, V. A. Kulbashinskii, V. G. Kytin, Sujay Chakravarty, A. K. Deb, S. Bandyopadhyay, Aritra Banerjee
Publikováno v:
International Journal of Energy Research. 46:17029-17042
Autor:
Chiranjit Karmakar, R. K. Kaneriya, Megha Malasi, Shivam Rathod, Devendra Kumar, Sujay Chakravarty, R. B. Upadhyay, Punam Kumar, A. N. Bhattacharya, U. S. Joshi
Publikováno v:
Applied Physics Letters. 122
Quantum transport properties of a large bandgap In0.15Al0.79Ga0.06N/GaN quaternary GaN high electron mobility transistor (HEMT) heterostructure are studied at low temperatures up to 2 K. Herein, we report the first evidence of weak localization in a
Autor:
Balaram Thakur, Yogesh Kumar, Mukul Gupta, U.P. Deshpande, N.V. Chandra Shekar, Sujay Chakravarty
Publikováno v:
Carbon. 191:205-214
Autor:
Deena Nath, Sujay Chakravarty, U.P. Deshpade, A.V. Thanikai Arasu, R. Baskaran, N.V. Chandra Shekar
Publikováno v:
Current Applied Physics. 34:122-132