Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Suigen Kyoh"'
Autor:
Mitsuhiro Omura, Suigen Kyoh, Yumi Nakajima, Kentaro Matsunaga, Shinya Watanabe, Toshiyuki Sasaki, Tsubasa Imamura, Kazuo Tawarayama
Publikováno v:
Journal of Photopolymer Science and Technology. 24:19-23
EUVL applicability to mass production in 2x nm generations has been proved by recent developments. For 1x nm generations, three major lithography candidates to be applied for mass productions are discussed, quadruple patterning, EUVL single patternin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef660e276ccd90df7f84a884b43f0c58
https://doi.org/10.2494/photopolymer.24.19
https://doi.org/10.2494/photopolymer.24.19
Publikováno v:
SPIE Proceedings.
Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa7ad24ff804b5754a5f1f64367d016e
https://doi.org/10.1117/12.2085628
https://doi.org/10.1117/12.2085628
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 135:424-429
Secondary-ion yields have been measured for a SiO 2 target bombarded by Ag ions at impact energies of 1.4–5.3 MeV, where the electronic and nuclear stopping powers compete with each other. Singly charged cluster ions as well as multiply charged mon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aacab64c7e9d7149a3a6b92ce0652ac9
https://doi.org/10.1016/s0168-583x(97)00525-9
https://doi.org/10.1016/s0168-583x(97)00525-9
Autor:
Suigen Kyoh, Takashi Kamo, Masato Naka, Keiko Morishita, Kosuke Takai, Koji Murano, Naoya Hayashi, Masamitsu Itoh, Kazuki Hagihara, Ryoji Yoshikawa, Shinji Yamaguchi
Publikováno v:
SPIE Proceedings.
Extreme Ultraviolet Lithography (EUVL) is a promising technology for the fabrication of ULSI devices with 20nm half-pitch node. One of the key challenges before EUVL is to achieve defect-free masks. There are three main categories of mask defects: mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86f77ef53a844ea595700c172d75c2d2
https://doi.org/10.1117/12.978976
https://doi.org/10.1117/12.978976
Publikováno v:
SPIE Proceedings.
Completer polarimetry for immersion lithography equipment that comprises Stokes polarimetry of illumination and Mueller matrix polarimetry of projecting optics had been established. It was found that illumination and projecting optics were slightly d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe78f39de682b37c09af4115157acba
https://doi.org/10.1117/12.879338
https://doi.org/10.1117/12.879338
Autor:
Yumi Nakajima, Kazuo Tawarayama, Kentaro Matsunaga, Hajime Aoyama, Satoshi Tanaka, Suigen Kyoh, Shunko Magoshi, Yumi Hayashi, Ichiro Mori
Publikováno v:
SPIE Proceedings.
Due to the promising development status of EUVL as a practical lithography technology for the 2x-nm node, we are continuing to evaluate its process liability using the EUV1 at Selete, which has an Off-Axis illumination capability. The resolution limi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e5fef8821d1022cb30c3f7a17beb94e
https://doi.org/10.1117/12.879333
https://doi.org/10.1117/12.879333
Autor:
Suigen Kyoh, Shimon Maeda, Atsuhiko Ikeuchi, Toshiya Kotani, Sachiko Kobayashi, Kazunari Kimura, Satoshi Tanaka, Soichi Inoue
Publikováno v:
SPIE Proceedings.
Continuous shrinkage of design rule (DR) in ultra-large-scale integrated circuit (ULSI) devices brings about greater difficulty in the manufacturing process. The keys to meeting small process margin are adequate extraction of critical dimension (CD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e149c8db7fd6e9eab4bfb30cdb27b295
https://doi.org/10.1117/12.881485
https://doi.org/10.1117/12.881485
Publikováno v:
SPIE Proceedings.
EUV lithography is a promising candidate for 2x-nm-node device manufacturing. Management of effective dose is important to meet the stringent requirements for CD control. Test pattern for a lithography tool evaluation, the effective dose monitor (EDM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e8cdc592bb2a1cd4e5c3f124a11bea6
https://doi.org/10.1117/12.868924
https://doi.org/10.1117/12.868924
Autor:
Kosuke Takai, Yukiko Kikuchi, Yukiyasu Arisawa, Taiga Uno, Yumi Hayashi, Ichiro Mori, Hajime Aoyama, Suigen Kyoh, Shunko Magoshi, Kazuo Tawarayama, Ryoichi Inanami, Koji Murano, Ayumi Kobiki, Satoshi Tanaka, Yumi Nakajima, Daisuke Kawamura, Kentaro Matsunaga
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is the most promising candidate for the manufacture of devices with a half pitch of 32 nm and beyond. We are now evaluating the process liability of EUVL in view of the current status of lithography technology d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::957d76daae21bcfb3de483952ff2d72b
https://doi.org/10.1117/12.846265
https://doi.org/10.1117/12.846265
Autor:
Masanari Kajiwara, Suigen Kyoh, Shimon Maeda, Soichi Inoue, Satoshi Tanaka, Koji Nakamae, Sachiko Kobayashi
Publikováno v:
SPIE Proceedings.
Continuous shrinkage of design rule (DR) in ultra-large-scale integrated circuit (ULSI) devices brings about greater difficulty in the manufacturing process. The keys to meeting small process margin are adequate extraction of critical dimension (CD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3f3abdd22d4dfb9f0828888c70f8e94
https://doi.org/10.1117/12.846542
https://doi.org/10.1117/12.846542