Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Suhyun Bang"'
Publikováno v:
AIP Advances, Vol 12, Iss 12, Pp 125217-125217-6 (2022)
In this work, a memristor using Si nano-tip bottom electrode has been fabricated and evaluated. Compared with the control device fabricated in a planar structure, the invented Si nano-tip device statistically demonstrates 400 times of area shrinkage
Externí odkaz:
https://doaj.org/article/21d9ea16cc404187bbb20b56dcacb7ec
Autor:
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park
Publikováno v:
IEEE Access, Vol 8, Pp 228720-228730 (2020)
In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation
Externí odkaz:
https://doaj.org/article/ddfa17aac0524a3c9faa17e4191ddceb
Autor:
Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Byung-Gook Park, Woo Young Choi
Publikováno v:
ACS Applied Electronic Materials. 5:1834-1843
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ada2397aa5b88ac80543a8b6a983b96
https://doi.org/10.1021/acsaelm.3c00034
https://doi.org/10.1021/acsaelm.3c00034
Autor:
Tae-Hyeon Kim, Byung-Gook Park, Sungmin Hwang, Suhyun Bang, Md. Hasan Raza Ansari, Dong Keun Lee, Seongjae Cho, Min-Hwi Kim
Publikováno v:
IEEE Transactions on Electron Devices. 68:4411-4417
In recent days, more hardware-driven artificial intelligence system capable of brain-like low-energy consumption is gaining ever-increasing interest. The hardware-driven property lies in the low-power synaptic device and its array along with the area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a55f4caa9c8b2ed184b4ae281e5c5cd0
https://doi.org/10.1109/ted.2021.3099769
https://doi.org/10.1109/ted.2021.3099769
Autor:
Sungjun Kim, Seongjae Cho, Yeon-Joon Choi, Byung-Gook Park, Min-Hwi Kim, Jong-Ho Lee, Kyungho Hong, Tae-Hyeon Kim, Dong Keun Lee, Suhyun Bang
Publikováno v:
IEEE Transactions on Electron Devices. 68:438-442
Low operation power and high endurance of resistive random access memory (RRAM) as a synaptic device are critical parameters for in-memory computing applications. Yet, high power consumption and reliability issue of silicon bottom electrode (BE) RRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0cf1cf88b437c7dbbaf58b5f17f7e2
https://doi.org/10.1109/ted.2020.3037267
https://doi.org/10.1109/ted.2020.3037267
Autor:
Kyung Kyu Min, Sungjun Kim, Chae Soo Kim, Seongjae Cho, Yeon Joon Choi, Jae Yoon Lee, Byung-Gook Park, Min-Hwi Kim, Kyungho Hong, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee
Publikováno v:
IEEE Transactions on Electron Devices. 67:1600-1605
In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiN x -based RRAM device has been fabricated and its switching characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c88d4a596438a6c1c57163c9d703808
https://doi.org/10.1109/ted.2020.2976106
https://doi.org/10.1109/ted.2020.2976106
Autor:
Seongjae Cho, Byung-Gook Park, Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Dong Keun Lee, Tae-Hyeon Kim
Publikováno v:
IEEE Transactions on Nanotechnology. 19:475-480
In this work, a two-terminal TiO x -based memristor device has been fabricated and the methods for controlling its conductance are demonstrated. The fabricated memristor device exhibits bipolar analog resistive-switching characteristics and the condu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc2cd78d11c10b94a4bf0299ba64cf5
https://doi.org/10.1109/tnano.2020.2996814
https://doi.org/10.1109/tnano.2020.2996814
Autor:
Seongjae Cho, Tae-Hyeon Kim, Sungjun Kim, Dong Keun Lee, Byung-Gook Park, Suhyun Bang, Kyungho Hong, Yeon-Joon Choi, Min-Hwi Kim, Chae Soo Kim
Publikováno v:
IEEE Access, Vol 8, Pp 228720-228730 (2020)
In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fda4a5ba8cf3ede01bb2df83c8ce4bc
https://ieeexplore.ieee.org/document/9301470/
https://ieeexplore.ieee.org/document/9301470/
Autor:
Sung Joon Kim, Yeon-Joon Choi, Suhyun Bang, Byung-Gook Park, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho, Kyungho Hong
Publikováno v:
Physical chemistry chemical physics : PCCP. 23(48)
A new physical analysis of the filament formation in Ag conducting-bridge random-access memory (CBRAM) in consideration of the existence of inter-atomic attractions caused by metal bonding is suggested. The movement of Ag atoms inside the switching l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb4c8aec7d8512fdc8be93fa1a80fdac
https://pubmed.ncbi.nlm.nih.gov/34853837
https://pubmed.ncbi.nlm.nih.gov/34853837
Autor:
Seongjae Cho, Byung-Gook Park, Sungjun Kim, Dong Keun Lee, Min-Hwi Kim, Tae-Hyeon Kim, Yeon-Joon Choi, Suhyun Bang
Publikováno v:
Solid-State Electronics. 154:31-35
A resistive switching random-access memory (ReRAM) device with TiN/HfO2/SiO2/p+-Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO2 as a switching layer, SiO2 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c32f993035a8f1a44765aea06d5e9911
https://doi.org/10.1016/j.sse.2019.02.008
https://doi.org/10.1016/j.sse.2019.02.008