Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Suhwan Lim"'
Autor:
Jong-Ho Bae, Suhwan Lim, Dongseok Kwon, Jai-Ho Eum, Sung-Tae Lee, Hyeongsu Kim, Byung-Gook Park, Jong-Ho Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 335-343 (2019)
The operation principle and near-linear potentiation mechanism of reconfigurable gated Schottky diodes (GSDs) are analyzed using calibrated device simulation. The reconfigurable GSD has two bottom gates and SiO2/Si3N4/SiO2 gate insulator stack. Accor
Externí odkaz:
https://doaj.org/article/a5f92cf559204adab7f7421ca26c0a45
Autor:
Suhwan Lim, Dongseok Kwon, Jai-Ho Eum, Sung-Tae Lee, Jong-Ho Bae, Hyeongsu Kim, Chul-Heung Kim, Byung-Gook Park, Jong-Ho Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 522-528 (2019)
An inference system using gated Schottky diode (GSD) is proposed for highly reliable hardware-based neural networks (HNNs). We explain the characteristics of the GSD and present circuits that take into account the characteristics of the device. The r
Externí odkaz:
https://doaj.org/article/84c524b9296040f88c60dbdd5111300f
Autor:
Sung-Tae Lee, Suhwan Lim, Nag Yong Choi, Jong-Ho Bae, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1085-1093 (2019)
We propose a designing of multi-layer neural networks using 2D NAND flash memory cell as a high-density and reliable synaptic device. Our operation scheme eliminates the waste of NAND flash cells and allows analogue input values. A 3-layer perceptron
Externí odkaz:
https://doaj.org/article/4d1166fb40324764b43fc328d4102fdb
Autor:
Dongseok Kwon, Suhwan Lim, Jong-Ho Bae, Sung-Tae Lee, Hyeongsu Kim, Young-Tak Seo, Seongbin Oh, Jangsaeng Kim, Kyuho Yeom, Byung-Gook Park, Jong-Ho Lee
Publikováno v:
Frontiers in Neuroscience, Vol 14 (2020)
Hardware-based spiking neural networks (SNNs) inspired by a biological nervous system are regarded as an innovative computing system with very low power consumption and massively parallel operation. To train SNNs with supervision, we propose an effic
Externí odkaz:
https://doaj.org/article/f5096bd0a86e4707923f48fb47fc3102
Autor:
Kyu-Bong Choi, Sung Yun Woo, Won-Mook Kang, Soochang Lee, Chul-Heung Kim, Jong-Ho Bae, Suhwan Lim, Jong-Ho Lee
Publikováno v:
Frontiers in Neuroscience, Vol 12 (2018)
Hardware-based spiking neural networks (SNNs) to mimic biological neurons have been reported. However, conventional neuron circuits in SNNs have a large area and high power consumption. In this work, a split-gate floating-body positive feedback (PF)
Externí odkaz:
https://doaj.org/article/a7d60555a937429c9c18e5598f56bc8f
Publikováno v:
IEEE Transactions on Electron Devices. 68:4766-4772
In this article, hardware-based spiking neural networks (SNNs) using capacitor-less positive feedback (PF) neuron devices are designed. It was reported that the PF device can simultaneously process the excitatory and inhibitory signals. The PF device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83c98d1a336aa77729c8bf892403a976
https://doi.org/10.1109/ted.2021.3098503
https://doi.org/10.1109/ted.2021.3098503
Autor:
Byung-Gook Park, Suhwan Lim, Hyeongsu Kim, Honam Yoo, Jong-Ho Lee, Gyuho Yeom, Jong-Ho Bae, Sung-Tae Lee
Publikováno v:
IEEE Transactions on Electron Devices. 68:3365-3370
In this work, a novel synaptic array architecture enabling forward propagation (FP) and backward propagation (BP) in the NAND flash memory is proposed for the first time for on-chip learning. In the proposed synaptic architecture, positive synaptic w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb6156b4e1b1fb6c4ad829b8bd06374d
https://doi.org/10.1109/ted.2021.3081610
https://doi.org/10.1109/ted.2021.3081610
Publikováno v:
IEEE Electron Device Letters. 42:863-866
In this work, the low-frequency noise (LFN) characteristics of reconfigurable field-effect-transistor (RFET), gated Schottky Diode (GSD), are investigated. The GSD has a different 1/ ${f}$ noise origin depending on the operation mode ( ${p}$ - or ${n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11694558b8fb728f3963374f8ae12d7f
https://doi.org/10.1109/led.2021.3072915
https://doi.org/10.1109/led.2021.3072915
Publikováno v:
IEEE Electron Device Letters. 42:442-445
In this work, the low-frequency noise (LFN) characteristics of the 3-terminal ${n}$ -type gated Schottky diode (GSD) were investigated. The GSD shows the 1/ ${f}$ noise behavior, and the noise origin depends on the operating current ( ${I}_{\text{D}}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e2a3be1db8c0bdc151744623ee8ff59
https://doi.org/10.1109/led.2021.3051197
https://doi.org/10.1109/led.2021.3051197
Publikováno v:
Geographical Analysis. 53:623-644
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1362a79d60893e7d43e072fbe3e923e2
https://doi.org/10.1111/gean.12248
https://doi.org/10.1111/gean.12248