Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Suhui, Lee"'
Autor:
Chanju Park, Munsu Choi, Suhui Lee, Hyunho Kim, Taeheon Lee, Mohammad Masum Billah, Byunglib Jung, Jin Jang
Publikováno v:
Nanomaterials, Vol 12, Iss 13, p 2127 (2022)
A piezoresistive sensor is an essential component of wearable electronics that can detect resistance changes when pressure is applied. In general, microstructures of sensing layers have been adopted as an effective approach to enhance piezoresistive
Externí odkaz:
https://doaj.org/article/9adc89081a1b428cbe0f8f025ddda42e
Autor:
Sadia Sayed Urmi, Mohammad Masum Billah, Sunaina Priyadarshi, Jinbaek Bae, Byunglib Jung, Suhui Lee, Keunwoo Kim, Jiyeong Shin, Sangun Choi, Junhyung Lim, Taewook Kang, Changhee Lee, Jin Jang
Publikováno v:
IEEE Electron Device Letters. 44:80-83
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::115ba6d8fdc3c5eca0d517e28cbabfeb
https://doi.org/10.1109/led.2022.3225863
https://doi.org/10.1109/led.2022.3225863
Publikováno v:
IEEE Electron Device Letters. 43:1890-1893
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca5402b1ff8e93c0c4db36a7d4392dc
https://doi.org/10.1109/led.2022.3208832
https://doi.org/10.1109/led.2022.3208832
Autor:
Mohammad Masum Billah, Abu Bakar Siddik, Dongjin Kim, Suhui Lee, Young Jo Cho, Md Hasnat Rabbi, Jin Jang
Publikováno v:
SID Symposium Digest of Technical Papers. 53:893-896
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea0ac587c70074dc6bbdf7c9e88678c
https://doi.org/10.1002/sdtp.15637
https://doi.org/10.1002/sdtp.15637
Publikováno v:
SID Symposium Digest of Technical Papers. 53:16-19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90d6dcdfe0e5131daf93b5f227c5033f
https://doi.org/10.1002/sdtp.15404
https://doi.org/10.1002/sdtp.15404
Publikováno v:
Amorphous Oxide Semiconductors. :239-272
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5479ebb4106f4f7904896b2a252b4f1f
https://doi.org/10.1002/9781119715641.ch11
https://doi.org/10.1002/9781119715641.ch11
Autor:
Suhui Lee, Md. Masum Billah, Hyunho Kim, Sunaina Priyadarshi, Md. Hasnat Rabbi, Jin Jang, Sadia Sayed Urmi
Publikováno v:
IEEE Electron Device Letters. 43:56-59
We report the dual gate (DG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with a top-gate (TG) drain offset (LTG(Off)) structure under dual-gate driving. The TFT shows an on/off current ratio of ~107, subthreshold swing of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd94464bdecbcaefa869c25f8927b2b2
https://doi.org/10.1109/led.2021.3128940
https://doi.org/10.1109/led.2021.3128940
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125110-125110-7 (2017)
We report two-step annealing, high temperature and sequent low temperature, for amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) to improve its stability and device performance. The annealing is carried out at 300 oC in N2 ambi
Externí odkaz:
https://doaj.org/article/b96f9ced39db48259d56dfb4d97aca56
A Novel Gate Driver Working Under Depletion Mode Oxide TFTs Using Low-Temperature Poly-Si Oxide TFTs
Publikováno v:
IEEE Electron Device Letters. 42:1619-1622
We report a novel gate driver integrated by low-temperature poly-Si oxide (LTPO) thin-film transistors (TFTs). The proposed gate driver consists of four p-type low-temperature polycrystalline silicon (LTPS) TFTs and two n-type amorphous indium galliu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::891843f50f770ebb5682abc163b09640
https://doi.org/10.1109/led.2021.3110272
https://doi.org/10.1109/led.2021.3110272
Publikováno v:
IEEE Electron Device Letters. 42:1476-1479
We report high voltage amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) using a drain offset structure. The a-IGZO TFT with drain offset length ( $\text{L}_{ {\mathrm{off}}}$ ) = $2.5~ \boldsymbol {\mu }\text{m}$ exhibits a max
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45cd302a10dcf7ceec7ad9e58d4e1b2c
https://doi.org/10.1109/led.2021.3109256
https://doi.org/10.1109/led.2021.3109256