Negative Capacitance Field Effect Transistors : Physics, Design, Modeling and Applications. [elektronicky zdroj]

Autor: Suh Song, Young

Externí odkaz: Kolekce e-knih KNAV (Registrovani uzivatele: plny text online 5 minut, dalsi pristup na vyzadani. Registered users: full text online 5 minutes, further access on request.)

Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET

Autor: Choi, Yunho, Lee, Kitae, Yeon Kim, Kyoung, Kim, Sihyun, Lee, Junil, Lee, Ryoongbin, Kim, Hyun-Min, Suh Song, Young, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook

Publikováno v: In Solid State Electronics February 2020 164

Improvement in Self-Heating Characteristic by Utilizing Sapphire Substrate in Omega-Gate-Shaped Nanowire Field Effect Transistor for Wearable, Military, and Aerospace Application.

Autor: Suh Song Y; Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea., Kim H; Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea., Yu J; Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea., Lee J; Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Publikováno v: Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2021 May 01; Vol. 21 (5), pp. 3092-3098.