Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Suguru Sassa"'
Autor:
Takumi Oya, Suguru Sassa
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
The purification method to produce highly pure products containing siloxane polymer was developed. Siloxane polymer can be difficult to be purified without changing its property because of its high reactivity. Of various methods, ion exchange is well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ec446379ef1e2655dbdaba7654084c
https://doi.org/10.1117/12.2553654
https://doi.org/10.1117/12.2553654
Autor:
Syuhei Shigaki, Ho Bang Ching, Yaguchi Hiroaki, Ryuji Onishi, Suguru Sassa, Endo Takafumi, Noriaki Fujitani, Rikimaru Sakamoto
Publikováno v:
ECS Transactions. 60:263-271
For below Hp22nm generation, Hard-mask strategy is one of the key issues to achieve the good balance for Lithography and Etching performance. The thickness of resist should be thicker enough to obtain the etching margin for the substrate etching. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345c909f4f4f1a5288a4459d80b0c5ef
https://doi.org/10.1149/06001.0263ecst
https://doi.org/10.1149/06001.0263ecst
Autor:
Noriaki Fujitani, Ryuji Onishi, Yaguchi Hiroaki, Suguru Sassa, Syuhei Shigaki, Ho Bang Ching, Rikimaru Sakamoto, Endo Takafumi
Publikováno v:
SPIE Proceedings.
For below Hp22nm generation, Hard-mask strategy is one of the key issues to achieve the good balance for Lithography and Etching performance. The thickness of resist should be thicker enough to obtain the etching margin for the substrate etching. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1063d878f3aa0c2d520c4bd26f3c8ee
https://doi.org/10.1117/12.916328
https://doi.org/10.1117/12.916328