Zobrazeno 1 - 10
of 492
pro vyhledávání: '"Sugii, Nobuyuki"'
Publikováno v:
In Solid State Electronics March 2016 117:161-169
Publikováno v:
In Thin Solid Films 2006 508(1):284-287
Autor:
Sugii, Nobuyuki *, Kimura, Yoshinobu, Kimura, Shin’ichiro, Irieda, Shigefumi, Morioka, Jun, Inada, Taroh
Publikováno v:
In Materials Science in Semiconductor Processing 2005 8(1):89-95
Autor:
Mokhammad, Sholihul Hadi, unknown, unknown, Sugii, Nobuyuki, Wakabayashi, Hitoshi, TSUTSUI, KAZUO, IWAI, HIROSHI, KAKUSHIMA, Kuniyuki
Publikováno v:
Microelectronics Reliability. 63:42-45
Resistive switching properties of a 2-nm-thick SiO 2 with a CeO x buffer layer on p + and n + Si bottom electrodes were characterized. The distribution of set voltage (V set ) with the p + Si bottom electrode devices reveals a Gaussian distribution c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3148fc61e601eb3f02f1d4974565d0a1
https://doi.org/10.1016/j.microrel.2016.06.013
https://doi.org/10.1016/j.microrel.2016.06.013
Autor:
DOU, CHUN MENG, Dou, Chunmeng, Shoji, Tomoya, Nakajima, Kazuhiro, KAKUSHIMA, Kuniyuki, AHMET, PARHAT, Kataoka, Yoshinori, Nishiyama, Akira, Sugii, Nobuyuki, Wakabayashi, Hitoshi, TSUTSUI, KAZUO, Natori, Kenji, IWAI, HIROSHI
Publikováno v:
Microelectronics Reliability. 54(4):725-729
Adopting the gated p–i–n diode configuration, the interface state density ( D it ) at the Si/SiO 2 interface of Si fin structures on Silicon-on-Insulator (SOI) wafers has been systematically studied using charge pumping method. The optimal formin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a678bf01bf440e841cde3d545a51cd60
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100801639
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100801639
Publikováno v:
In Thin Solid Films 3 July 2000 369(1-2):195-198
Publikováno v:
IEEE Transactions on Electron Devices; Jan2020, Vol. 67 Issue 1, p224-229, 6p
Publikováno v:
Journal of Applied Physics; 7/1/2004, Vol. 96 Issue 1, p261-268, 8p, 1 Black and White Photograph, 1 Diagram, 11 Graphs
Publikováno v:
Journal of Applied Physics; 7/1/2003, Vol. 94 Issue 1, p465, 6p, 3 Diagrams, 2 Charts, 8 Graphs