Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sue Ann Oh"'
Publikováno v:
Faraday Discussions. 221:59-76
For over a decade there has been some significant excitement and speculation that quantum effects may be important in the excitation energy transport process in the light harvesting complexes of certain bacteria and algae, in particular via the Fenna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a529bc142c436dab24262167835f43b
https://doi.org/10.1039/c9fd00081j
https://doi.org/10.1039/c9fd00081j
Publikováno v:
Carbon. 46:829-831
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae1ca6780dfd7f63a37ab50bfdaa3f6a
https://doi.org/10.1016/j.carbon.2008.02.022
https://doi.org/10.1016/j.carbon.2008.02.022
Publikováno v:
Optoelectronics-Materials and Techniques
1.1 Foreword The III-V nitrides have long been viewed as promising semiconductor materials for their application in the blue and ultraviolet wavelengths optical devices, as well as high power and high temperature electronic devices. In the absence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::152dff17cf34db2cd1895f067ec47cdb
http://www.intechopen.com/articles/show/title/gallium-nitride-an-overview-of-structural-defects
http://www.intechopen.com/articles/show/title/gallium-nitride-an-overview-of-structural-defects
Autor:
Fang-Yue Liu, Ganesh S. Samudra, Xincai Wang, Sue-Ann Oh, Poh-Chong Lim, Yee-Chia Yeo, Ben Lian Huat Tan, D.M.Y. Lai, Kah-Wee Ang, N. Balasubramanian, Ming Zhu, Sukant K. Tripathy, Hoong-Shing Wong
Publikováno v:
2008 Symposium on VLSI Technology.
We report for the first time a new process technology for boosting the Ge content in SiGe source/drain (S/D) stressors to increase strain and performance levels in p-FETs. By laser-induced local melting and inter-mixing of an amorphous Ge layer with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9776eb4e7d7d1c6b08ec049ff8d1fb45
https://doi.org/10.1109/vlsit.2008.4588550
https://doi.org/10.1109/vlsit.2008.4588550
Publikováno v:
Electrochemical and Solid-State Letters. 12:H266
In this article, metal (palladium, Pd)-induced lateral crystallization (MILC) of amorphous-germanium (α-Ge) films prepared by room-temperature sputtering on an insulating material (SiO 2 ) is observed and investigated using micro-Raman microscopy an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05ee082a9a318f4f4cffa7178946d704
https://doi.org/10.1149/1.3126496
https://doi.org/10.1149/1.3126496
Autor:
Fangyue Liu, Hoong-Shing Wong, Kah-Wee Ang, Ming Zhu, Xincai Wang, Lai, D.M.-Y., Poh-Chong Lim, Ben Lian Huat Tan, Tripathy, S., Sue-Ann Oh, Samudra, G.S., Balasubramanian, N., Yee-Chia Yeo
Publikováno v:
2008 Symposium on VLSI Technology; 2008, p26-27, 2p