Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sudhir K. Madan"'
Autor:
Yunchen Qiu, R. Acklin, Xiao-Hong Du, K. Remack, Anand Seshadri, John Y. Fong, D. Liu, W.F. Kraus, J. Roscher, Terence G. W. Blake, Scott R. Summerfelt, S. Natarajan, Sudhir K. Madan, J. Eliason, Ning Qian, J. Rodriguez, Theodore S. Moise, Hugh P. McAdams
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:667-677
A low-voltage (1.3 V) 64-Mb ferroelectric random access memory (FRAM) using a one-transistor one-capacitor (1T1C) cell has been fabricated using a state-of-the-art 130-nm transistor and a five-level Cu/flouro-silicate glass (FSG) interconnect process
Autor:
Scott R. Summerfelt, K. R. Udayakumar, J. Rodriguez-Latorre, Theodore S. Moise, S. Chevacharoenkul, Sudhir K. Madan, Hugh P. McAdams, D. Frystak, Tamer San, P. Ndai, M. Ball, C. Zhou, J. Rodriguez
Publikováno v:
2013 5th IEEE International Memory Workshop.
An embedded 448kb 2T-2C FRAM, integrated into a 180nm analog process flow, has been developed and qualified for more than 10years data retention at 125°C. Key electrical characteristics of the memory include wide signal margins with no outlier bits,
Autor:
P. Ndai, Theodore S. Moise, Hugh P. McAdams, J. Rodriguez-Latorre, M. Ball, J. Rodriguez, Tamer San, Sudhir K. Madan, C. Zhou, Antonio Guillermo Acosta, Scott R. Summerfelt, K. R. Udayakumar, Archana Venugopal
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Reliability of a 2T-2C, 448kbit FRAM embedded within 180nm CMOS is presented. The results indicate a 10-year, 125°C data retention capability for this technology. Further, sufficient signal margin remains for sensing following 260°C Pb-free solder
Autor:
Liang Wang, M. Ball, K. R. Udayakumar, Theodore S. Moise, Hugh P. McAdams, J. Rodriguez, Sudhir K. Madan, Scott R. Summerfelt
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Autor:
K. R. Udayakumar, A. Haider, M. Depner, Theodore S. Moise, Sudhir K. Madan, K. Boku, J. Eliason, Hugh P. McAdams, R. Bailey, Gregory B. Shinn, K. Remack, D. Kim, P. Staubs, John A. Rodriguez, Scott R. Summerfelt, J. Gertas
Publikováno v:
2008 17th IEEE International Symposium on the Applications of Ferroelectrics.
Reliability data is presented for a 4Mb Ferroelectric Random Access Memory (F-RAM) embedded within a 130nm CMOS process. Write/read endurance in the device exhibits stable intrinsic bit properties through 2.7x1013 cycles. Data retention demonstrates
Autor:
M. Depner, D. Kim, Theodore S. Moise, Scott R. Summerfelt, Hugh P. McAdams, J. Eliason, J. Rodriguez, J. Gertas, P. Staubs, Sudhir K. Madan, K. Remack, Gregory B. Shinn, K. R. Udayakumar, K. Boku, R. Bailey
Publikováno v:
2007 Non-Volatile Memory Technology Symposium.
Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4times1012 cycles shows no degradation of switched polarization. 10 year, 85degC, dat
Autor:
R. Bailey, J. Gertas, J. Rodriguez, M. Depner, Theodore S. Moise, D. Kim, Hugh P. McAdams, K. R. Udayakumar, J. Eliason, P. Staubs, K. Boku, Sudhir K. Madan, J. Groat, K. Remack, Scott R. Summerfelt
Publikováno v:
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.
Ferroelectric memories are the most promising alternative to traditional embedded nonvolatile memories, such as flash and EEPROMs, because of their fast read/write cycle time, non-volatile data retention, low voltage/low power operation and low numbe
Autor:
B. Khan, Glen R. Fox, J. Rodriguez, J. Groat, A. Haider, R. Bailey, N. Schauer, Sudhir K. Madan, K. Remack, K. R. Udayakumar, Yaw S. Obeng, K. Boku, A. McKerrow, G. Albrecht, J. S. Martin, Gregory B. Shinn, E. Jabillo, J. Walbert, S. R. Summerfelt, Theodore S. Moise, Hugh P. McAdams, Sanjeev Aggarwal, D. Anderson, J. Gertas, Francis G. Celii, J. Eliason
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Autor:
Theodore S. Moise, Xiao-Hong Du, Scott R. Summerfelt, Ralph H. Lanham, Jürgen T. Rickes, R. Acklin, J. Eliason, C. Pietrzyk, Hugh P. McAdams, John Y. Fong, Y. Qui, N. Qian, Anand Seshadri, S. Natarajan, Sudhir K. Madan, J. Roscher, F. Li, W.F. Kraus, D. Liu, Terence G. W. Blake
Publikováno v:
2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408).
A low-voltage (1.3V), 64 Mbit Ferroelectric Random Access Memory using a 1-transistor, 1-capacitor (1T1C) cell is demonstrated. This is the largest FRAM memory demonstrated to date. The memory is constructed using a state-of-the-art 130 nm transistor
Autor:
Sudhir K. Madan, Tom Holloway
Publikováno v:
SPIE Proceedings.
A simple and nondestructive low energy electron beam surface SEM is used in-line to measure the active width with LOCOS isolation. The method resulted in photos with excellent contrast between the silicon and oxide. Also a good correlation between th