Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Sudarat Lee"'
Autor:
Kevin P. O’Brien, Carl H. Naylor, Chelsey Dorow, Kirby Maxey, Ashish Verma Penumatcha, Andrey Vyatskikh, Ting Zhong, Ande Kitamura, Sudarat Lee, Carly Rogan, Wouter Mortelmans, Mahmut Sami Kavrik, Rachel Steinhardt, Pratyush Buragohain, Sourav Dutta, Tristan Tronic, Scott Clendenning, Paul Fischer, Ernisse S. Putna, Marko Radosavljevic, Matt Metz, Uygar Avci
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-5 (2023)
The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent
Externí odkaz:
https://doaj.org/article/f96e8d19735141ee83b9271a47ca8847
Autor:
Carl H. Naylor, Chelsey Dorow, O'brien Kevin P, Kirby Maxey, Arnab Sen Gupta, Andy Hsiao, Tronic Tristan A, Penumatcha Ashish Verma, Scott B. Clendenning, Gosavi Tanay, Matthew V. Metz, Michael Christenson, Sudarat Lee, Robert L. Bristol, Uygar E. Avci, Alaan Urusa, A. A. Oni, Hui Zhu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6592-6598
2-D-material channels enable ultimate scaling of MOSFET transistors and will help Moore's Law scaling for years. We demonstrate the state of both n- and p-MOSFETs using monolayer transition metal dichalcogenide (TMD) channels of sub-1 nm thickness an
Publikováno v:
ACS applied materialsinterfaces.
In this study, systematic geometric tuning of core-shell nanowire (NW) architectures is used to decouple the contributions from light absorption, charge separation, and charge transfer kinetics in photoelectrochemical water oxidation. Core-shell-shel
Autor:
Kai Sun, Bart M. Bartlett, Neil P. Dasgupta, James J. Brancho, Ashley R. Bielinski, Andrew J. Gayle, Samuel L. Esarey, Eric Kazyak, Sudarat Lee
Publikováno v:
Chemistry of Materials. 31:3221-3227
Bismuth vanadate (BVO) is a promising metal oxide semiconductor for photoelectrochemical water oxidation. In this study, BVO was deposited using atomic layer deposition (ALD) of alternating films o...
Publikováno v:
Journal of Crystal Growth. 482:36-43
Gallium phosphide (GaP) nanowire film electrodes have been prepared via solid sublimation of GaP powder using both gold (Au) and tin (Sn) nanoparticles as the vapor-liquid-solid (VLS) catalysts on Si(1 1 1) and GaP(1 1 1)B substrates. The resultant G
Publikováno v:
ACS Applied Materials & Interfaces. 8:16178-16185
P-type macroporous gallium phosphide (GaP) photoelectrodes have been prepared by anodic etching of an undoped, intrinsically n-type GaP(100) wafer and followed by drive-in doping with Zn from conformal ZnO films prepared by atomic layer deposition (A
Publikováno v:
RSC Advances. 6:78818-78825
Direct synthesis of crystalline silicon (Si) nanowires at low temperatures has been achieved through an electrochemical liquid–liquid–solid (ec-LLS) process. Liquid metal nanodroplets containing Ga were used as both discrete ultramicroelectrodes
Autor:
Kevin A. Meyer, Neil P. Dasgupta, Abhishek Dhyani, Alondra M. Ortiz‐Ortiz, Ashley R. Bielinski, Sudarat Lee, Anish Tuteja, Jing Wang
Publikováno v:
Advanced Materials Interfaces. 7:2000672
Publikováno v:
Journal of Materials Research. 30:2170-2178
Single-phase crystalline ZnSnP2 nanowires have been prepared via simple chemical vapor deposition method using powdered Zn and SnP3 as the precursors in a custom-built tube furnace reactor. The sublimed precursors were allowed to react with thermally
Autor:
Ashley R. Bielinski, Sudarat Lee, Samuel L Esarey, James J Brancho, Bart M. Bartlett, Neil P. Dasgupta
Publikováno v:
ECS Meeting Abstracts. :1940-1940
Bismuth vanadate (BVO) has been widely studied as one of the most promising photoanode materials for photoelectrochemical (PEC) water splitting, owing to a bandgap of 2.4 eV and favorable band positions for water oxidation. However, while BVO has the