Zobrazeno 1 - 10
of 426
pro vyhledávání: '"Suckert, A."'
Publikováno v:
In Cell Calcium June 2024 120
Autor:
Borlido, Pedro, Suckert, Jens Renè, Furthmüller, Jürgen, Bechstedt, Friedhelm, Botti, Silvana, Rödl, Claudia
We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-funct
Externí odkaz:
http://arxiv.org/abs/2105.01980
Publikováno v:
Metals, Vol 14, Iss 6, p 707 (2024)
The article focuses on analyzing changes in the chemical composition of steel samples after the cooling phase. A few distinct types of samples made of St3S steel were heated in an electric resistance furnace for 1 h. The temperature in the following
Externí odkaz:
https://doaj.org/article/426a5b9173d940569483ec9023d2b8af
Publikováno v:
Phys. Rev. Materials 5, 024602 (2021)
Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at le
Externí odkaz:
http://arxiv.org/abs/2009.06252
Akademický článek
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Autor:
Fadaly, E. M. T., Dijkstra, A., Suckert, J. R., Ziss, D., Tilburg, M. A. J. v., Mao, C., Ren, Y., Lange, V. T. v., Kölling, S., Verheijen, M. A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J. J., Botti, S., Haverkort, J. E. M., Bakkers, E. P. A. M.
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot e
Externí odkaz:
http://arxiv.org/abs/1911.00726
Autor:
Suckert, Lisa, Ergen, Timur
Publikováno v:
Historical Social Research / Historische Sozialforschung, 2022 Jan 01. 47(4), 242-266.
Externí odkaz:
https://www.jstor.org/stable/27182682
Autor:
Suckert, Michaela michaela.suckert@gmx.de
Publikováno v:
Padua. Nov2024, Vol. 19 Issue 5, p263-267. 5p.
Autor:
Soltwedel, Johannes, Suckert, Theresa, Beyreuther, Elke, Schneider, Moritz, Boucsein, Marc, Bodenstein, Elisabeth, Nexhipi, Sindi, Stolz-Kieslich, Liane, Krause, Mechthild, von Neubeck, Cläre, Haase, Robert, Lühr, Armin, Dietrich, Antje
Publikováno v:
In Radiotherapy and Oncology May 2023 182
Autor:
Rödl, Claudia, Furthmüller, Jürgen, Suckert, Jens Renè, Armuzza, Valerio, Bechstedt, Friedhelm, Botti, Silvana
Publikováno v:
Phys. Rev. Materials 3, 034602 (2019)
High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applicati
Externí odkaz:
http://arxiv.org/abs/1812.01865