Zobrazeno 1 - 10 of 84 pro vyhledávání: '"Suck Whan Kim"'
5
Growth of a Thick AlN Epilayer by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method
Autor: Injun Jeon, Min Yang, Kyoung Hwa Kim, Jung Hyun Park, Suck-Whan Kim, Sam Nyung Yi, Chae-Ryong Cho, Hyung Soo Ahn
Publikováno v: Journal of the Korean Physical Society. 77:282-287
A thick AlN epilayer with an approximately 1.25-mm thickness was grown on a sapphire substrate by using a mixed source (Al+Ga of very small amount) at around 1150 °C for 2 hours and a mixed-source hydride vapor phase epitaxy (HVPE) method in a simpl
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ebea607bc7396ce0706d35e0588109e
https://doi.org/10.3938/jkps.77.282
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7
Comparison of AIN Nanowire-Like Structures Grown by using Mixed-Source Hydride Vapor Phase Epitaxy Method
Autor: Chae-Ryong Cho, Hunsoo Jeon, Kyoung Hwa Kim, Injun Jeon, Min Yang, Sam Nyung Yi, Suck-Whan Kim, Hyung Soo Ahn, Gang Seok Lee
Publikováno v: Journal of the Korean Physical Society. 75:242-247
Four AlN nanowire-like structures were simultaneously grown directly without a buffer layer on four substrates-sapphire, quartz, Si(111), and 6H-SiC-via a mixed-source hydride vapor phase epitaxy (HVPE) method using a mixed source (Al+Ga) containing
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::517f98472d77cbc1ca15e9c0fff52d9b
https://doi.org/10.3938/jkps.75.242
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8
Growth of AlN Epilayers on Sapphire Substrates by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method
Autor: Injun Jeon, Min Yang, Chae-Ryong Cho, Hunsoo Jeon, Kyoung Hwa Kim, Suck-Whan Kim, Gang Seok Lee, Hyung Soo Ahn, Sam Nyung Yi
Publikováno v: Journal of the Korean Physical Society. 74:1160-1165
AIN epilayers of different thicknesses were grown directly on sapphire substrates without a buffer layer by using a mixed (Al+Ga) source containing 95 at% Al and a mixed-source hydride vapor phase epitaxy (HVPE) method at a temperature of around 1120
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2dda982396601d65635c05d4170a561c
https://doi.org/10.3938/jkps.74.1160
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9
Insights into the growth of hexagonal Si crystals using Al-based nano absorber
Autor: Kyoung Hwa Kim, Gang Seok Lee, Hyung Soo Ahn, Jae Hak Lee, Jongseok Kim, Young Tea Chun, Min Yang, Sam Nyung Yi, Sun-Lyeong Hwang, Suck-Whan Kim
Publikováno v: Semiconductor Science and Technology. 37:045016
Although hexagonal (2H) silicon (Si) semiconductors exhibit excellent optical properties owing to their quasi-direct bandgap, their growth conditions, which require extremely high pressures, preclude their widespread use in industrial applications. T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::237d61fdf6308dd3c0f82d8bb3164bd7
https://doi.org/10.1088/1361-6641/ac579c
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