Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Sucheta Juneja"'
Autor:
Sucheta Juneja, Sushil Kumar
Publikováno v:
Silicon. 14:10459-10466
Demand for efficient window layer in thin film solar cells with high crystallinity is ever increasing that finds important application in multi-junction/tandem silicon solar cells. Doping of diborane (B2H6) in hydrogenated silicon films using plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::662920199cc5c5882cdf0d4feb77418b
https://doi.org/10.1007/s12633-022-01738-z
https://doi.org/10.1007/s12633-022-01738-z
Publikováno v:
Journal of Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64354724e8f960cb6f9d9d8c80e9a0bd
https://doi.org/10.1007/s12596-023-01127-8
https://doi.org/10.1007/s12596-023-01127-8
Autor:
Sushil Kumar, Sucheta Juneja
Publikováno v:
Silicon. 13:3927-3940
The silicon thin films have been deposited using VHF (60 MHz) plasma enhanced chemical vapor deposition (PECVD) process. The influence of the power (10–50 W), used during the deposition, on the silicon thin films properties was studied. The structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6312590c1518244875b2d8fa03fc2fa2
https://doi.org/10.1007/s12633-020-00697-7
https://doi.org/10.1007/s12633-020-00697-7
Autor:
Manmohan Jain, Sucheta Juneja, Kalpana Lodhi, Chander Kant, Sushil Kumar, Mohit Jain, Ateet Dutt, Yasuhiro Matsumoto
Publikováno v:
2021 18th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe398001f88b97e2ee8cd4d501227bd
https://doi.org/10.1109/cce53527.2021.9633065
https://doi.org/10.1109/cce53527.2021.9633065
Publikováno v:
Journal of Theoretical and Applied Physics, Vol 13, Iss 2, Pp 107-113 (2019)
Different optical characterization techniques have been performed on a series of microcrystalline silicon thin films deposited using very high-frequency-assisted plasma-enhanced chemical vapor deposition process. The constant photocurrent method has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39734f541ce116fa9a77543f0dbc9894
http://link.springer.com/article/10.1007/s40094-019-0325-4
http://link.springer.com/article/10.1007/s40094-019-0325-4
Publikováno v:
Silicon. 11:1925-1937
Infra-red spectroscopy as an effective tool used to establish platelet like configuration in nanocrystalline silicon thin films (nc-Si:H). These films were deposited using 60 MHz assisted very high frequency plasma enhanced chemical vapor deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a8838f2e4443c34e96f6781e21f2412
https://doi.org/10.1007/s12633-018-0008-9
https://doi.org/10.1007/s12633-018-0008-9
Publikováno v:
Thin Solid Films. 619:273-280
In the present investigation three distinct silicon thin films designated as (i) amorphous silicon, a-Si:H (ii) mixed structure consisting of small crystallites of silicon embedded in amorphous matrix, a-Si:H/nc-Si:H & (iii) mixed structure of larger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41626069c8132eae74cd45b0a297c99d
https://doi.org/10.1016/j.tsf.2016.10.051
https://doi.org/10.1016/j.tsf.2016.10.051
Publikováno v:
Materials Science in Semiconductor Processing. 43:41-46
In this study, we revisited the significance of the p/i interface for hydrogenated amorphous silicon (a-Si:H) solar cells. Initially, intrinsic and extrinsic (p and n type) a-Si:H layers were grown in a low pressure regime (0.5–0.1 Torr) using the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfba7b02bd497592176f5b933a80c161
https://doi.org/10.1016/j.mssp.2015.10.021
https://doi.org/10.1016/j.mssp.2015.10.021
Publikováno v:
Materials Science in Semiconductor Processing. 40:11-19
Mixed phase amorphous and nanocrystalline silicon (a-Si:H and nc-Si:H) thin films were deposited by VHF-PECVD (60 MHz) using Argon (Ar) as the diluent of silane. These amorphous and crystalline silicon thin films were deposited by varying the argon d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e21239f7698dd781aa2e5717ba746fb
https://doi.org/10.1016/j.mssp.2015.06.046
https://doi.org/10.1016/j.mssp.2015.06.046
Publikováno v:
Journal of Alloys and Compounds. 643:94-99
Boron doped hydrogenated micro/nanocrystalline silicon (μc/nc-Si:H) thin films have been deposited by plasma enhanced chemical vapor deposition technique (PECVD) using silane (SiH4) diluted in argon. Diborane (B2H6) was used as the dopant gas and de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::713edd7e3bc1eb0246a04932ec833c2f
https://doi.org/10.1016/j.jallcom.2015.04.077
https://doi.org/10.1016/j.jallcom.2015.04.077