Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Subthermal"'
Publikováno v:
BMC Cancer, Vol 19, Iss 1, Pp 1-14 (2019)
Abstract Background Capacitive-resistive electric transfer (CRET) is a non-invasive therapeutic strategy that applies radiofrequency electric currents within the 400–600 kHz range to tissue repair and regeneration. Previous studies by our group hav
Externí odkaz:
https://doaj.org/article/fb70e1d72e12409784791ecd8f3106fc
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 149-157 (2015)
This paper describes the potential of tunable strain in field-effect transistors to boost performance of digital logic. Voltage-controlled strain can be imposed on a semiconductor body by the integration of a piezoelectric material improving transist
Externí odkaz:
https://doaj.org/article/57b3cc27d38740dcb26cfd83256fcf99
Akademický článek
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Publikováno v:
New Journal of Physics, Vol 18, Iss 5, p 052002 (2016)
Recent experimental evidence points to low-energy magnons as the primary contributors to the spin Seebeck effect. This spectral dependence is puzzling since it is not observed on other thermocurrents in the same material. Here, we argue that the phys
Externí odkaz:
https://doaj.org/article/279df0c044f342548e6740259f707b71
Publikováno v:
BMC Cancer
BMC Cancer, Vol 19, Iss 1, Pp 1-14 (2019)
BMC Cancer, Vol 19, Iss 1, Pp 1-14 (2019)
Background Capacitive-resistive electric transfer (CRET) is a non-invasive therapeutic strategy that applies radiofrequency electric currents within the 400–600 kHz range to tissue repair and regeneration. Previous studies by our group have shown t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cac100a0f01e7b1ac5b6c9be8af7153
https://doi.org/10.1186/s12885-019-6090-6
https://doi.org/10.1186/s12885-019-6090-6
Autor:
Felice Crupi, David Esseni, Francesco Settino, Pierpaolo Palestri, Marco Lanuzza, Sebastiano Strangio
In the past decade the Tunnel Field Effect Transistor (TFET) relying on band-to-band tunneling (BTBT) has emerged as one of the most promising small slope FETs able to achieve a subthreshold swing (SS) below the room temperature 60 mV/dec limit of co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::796382916e9fd5a1068f1372bdab8910
http://hdl.handle.net/11568/999944
http://hdl.handle.net/11568/999944
Publikováno v:
Journal of the Electron Devices Society. 3(3):149-157
This paper describes the potential of tunable strain in field-effect transistors to boost performance of digital logic. Voltage-controlled strain can be imposed on a semiconductor body by the integration of a piezoelectric material improving transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dris___00893::7d567430dc682b851acdde0c74fb8c89
http://eprints.eemcs.utwente.nl/secure2/26030/01/hueting_jeds.pdf
http://eprints.eemcs.utwente.nl/secure2/26030/01/hueting_jeds.pdf
Autor:
Vasić, Ljiljana M.
Publikováno v:
Универзитет у Београду
postupaka koji je primenjen u cilju definisanja zona prihranjivanja i veze između podzemnih i površinskih voda, vremena koje voda provede u podzemlju, pri čemu se formira jedinstven hemijski sastav i temperaturni režim isteklih voda, bili su pola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=nardusnacion::ddd6617917a81491fd8b3135bf2798a3
https://nardus.mpn.gov.rs/bitstream/id/15342/IzvestajKomisije14925.pdf
https://nardus.mpn.gov.rs/bitstream/id/15342/IzvestajKomisije14925.pdf
A subthreshold swing (SS) below 60 mV/decade at room temperature is a critical requirement in CMOS transistors for ultralow power electronics. In the past decade, tremendous efforts have been made to explore new switching mechanisms overcoming the Bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::526c42f1844c7a5e20ae636e85fc4ffc
http://hdl.handle.net/11390/1123807
http://hdl.handle.net/11390/1123807
Akademický článek
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