Zobrazeno 1 - 10
of 8 248
pro vyhledávání: '"Substrate integrated waveguide"'
Publikováno v:
IET Microwaves, Antennas & Propagation, Vol 18, Iss 10, Pp 771-778 (2024)
Abstract A novel slow‐wave half‐mode substrate integrated waveguide (HMSIW) bandpass filter (BPF) is proposed based on spoof surface plasmon polaritons (SSPPs) with loading capacitive patches (LCPs). The bandpass characteristics are achieved by e
Externí odkaz:
https://doaj.org/article/e0cae97e7a1a4218bf8d577377ab3455
Publikováno v:
Electromagnetic Science, Vol 2, Iss 3, Pp 1-7 (2024)
A compact dual-band quasi-elliptic filter with high selectivity is developed and investigated in this communication. It employs two hybrid-structure substrate integrated waveguide (SIW) triplets, which show completely inverse transfer responses under
Externí odkaz:
https://doaj.org/article/e4b02a6a3f76486b92dffd6d8e06fac0
Publikováno v:
IEEE Access, Vol 12, Pp 122902-122917 (2024)
Despite extensive research on integrating Substrate Integrated Waveguide (SIW) technologies with conventional transmission technologies such as Microstrip Transmission Line (MSTL), Co-planar Waveguide (CPW), Rectangular Waveguide (RWG), and Coaxial l
Externí odkaz:
https://doaj.org/article/e769ec9b2d114e24ad6e000918d522c5
Publikováno v:
ETRI Journal, Vol 46, Iss 3, Pp 404-412 (2024)
We propose a method for increasing the bandwidth of a substrateintegrated-waveguide (SIW) cavity-backed antenna with taper-based microstrip SIW transition feeding. For radio transmission, a circular slot is etched on top of the SIW cavity. For optima
Externí odkaz:
https://doaj.org/article/13698b0a8bc8459fa6b716ba681c5ce9
Autor:
Zhixia Xu, Xiaonan Sun, Haotian Wu, Zengxu Xiong, Xue Zhou, Haoxi Yu, Xiaoxing Yin, Daniel F. Sievenpiper, Tie Jun Cui
Publikováno v:
Advanced Science, Vol 11, Iss 33, Pp n/a-n/a (2024)
Abstract In engineered photonic lattices, topological photonic (TP) modes present a promising avenue for designing waveguides with suppressed backscattering. However, the integration of the TP modes in electromagnetic systems has faced longstanding c
Externí odkaz:
https://doaj.org/article/9a6ed8b8d5564a93b8cce78ec4bc0772
Autor:
N Sathishkumar, SatheeshKumar Palanisamy, Rajesh Natarajan, Anitha V.R, Khmaies Ouahada, Habib Hamam
Publikováno v:
Heliyon, Vol 10, Iss 17, Pp e36929- (2024)
Antennas with higher gain and efficiency deliver superior performance across a wide frequency range. Achieving these characteristics at high frequencies while keeping a compact size necessitates sophisticated design approaches. This research presents
Externí odkaz:
https://doaj.org/article/e939bad1aa1d4e65b943f6013ee1bb85
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 9, Iss , Pp 100739- (2024)
This article presents a compact dual-band Bandpass Filter(BPF) based substrate integrated waveguide(SIW) used for C and X band applications. Complementary split-ring resonators(CSRR) are loaded into the waveguide surface to obtain more advantages of
Externí odkaz:
https://doaj.org/article/33ab6da7a5cd4579b23ce14d196f4b00
Publikováno v:
Materials & Design, Vol 244, Iss , Pp 113216- (2024)
In this paper, a novel hybrid spoof surface plasmon polaritons (SSPPs) and via-free half-mode substrate integrated waveguide (HMSIW) is proposed to constitute a compact bandpass filter (BPF). Different from the conventional HMSIW with ground holes, t
Externí odkaz:
https://doaj.org/article/a249dd7f4f5f4445b665cee824bc5e6e
Publikováno v:
Engineering Science and Technology, an International Journal, Vol 56, Iss , Pp 101776- (2024)
This paper proposes compact and wideband crossover and monopulse comparator based on the new multi-layer vertical transition of substrate integrated waveguide (SIW). Through etching slot lines in the internal layers and arranging vias to connect the
Externí odkaz:
https://doaj.org/article/5dad6c84c81c4b59a448c7eb00a321b1
Publikováno v:
Electronics Letters, Vol 60, Iss 14, Pp n/a-n/a (2024)
Abstract This letter presents a novel millimetre‐wave (mm‐wave) on‐chip substrate integrated waveguide (SIW) filtering crossover using 0.25 µm GaAs pHEMT technology. The design methodology of the proposed crossover is thoroughly illustrated. T
Externí odkaz:
https://doaj.org/article/db538175d38f443ea8ef79e78a2b3a63