Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Subramanian Narasimhamoorthy"'
Autor:
Arnout Beckers, Farzan Jazaeri, Alexander Grill, Subramanian Narasimhamoorthy, Bertrand Parvais, Christian Enz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 780-788 (2020)
This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant free
Externí odkaz:
https://doaj.org/article/7ef2b0913ace482097a3cfb302c12d02
Autor:
Nagasatish Godavarthi, Balaji Swaminathan, Subramanian Narasimhamoorthy, Kaushik Ghosal, Anupam Dutta, Randy Wolf, Venkata Narayana Rao Vanukuru
Publikováno v:
2019 IEEE MTT-S International Microwave and RF Conference (IMARC).
A 6 GHz CMOS low-noise amplifier (LNA) with very low noise-figure (NF) of 0.92 dB is reported in this paper. An inductively degenerated cascode topology is used for the LNA. The common source device is a floating body transistor for higher unity gain
La qualité du transport électronique est l’une des clés permettant de soutenir la progression des performances pour les futures générations de composants. De très nombreux facteurs, comme le choix de l’isolant et du métal de grille, le mat
Externí odkaz:
http://www.theses.fr/2011GRENT093/document
Publikováno v:
Autre. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENT093⟩
Electron transport is one of the key properties that need to be improved in order to sustain performance improvement for the next technological nodes. Many factors, such as the choice of gate stack materials, channel material or the presence of mecha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c951a60790311bfa0b03f0a902e3df90
https://theses.hal.science/tel-00720613
https://theses.hal.science/tel-00720613